Journal Article10.1063/1.92226
Diffusion length of holes in a‐Si:H by the surface photovoltage method
71
TL;DR: In this paper, the diffusion length for holes in undoped aSi:H films has been measured by using a variation of the surface photovoltage method, and values of L in the range 0.33-0.45 μ were found for samples prepared at substrate temperatures Ts = 240 °C and Ts = 330 C.
read more
Abstract: The diffusion length L for holes in undoped a‐Si:H films has been measured by using a variation of the surface photovoltage method. Values of L in the range 0.33–0.45 μ were found for samples prepared at substrate temperatures Ts = 240 °C and Ts = 330 °C. After prolonged illumination, a reduction to L<0.2 μ was observed; the original value of L was restored after annealing at 200 °C.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Surface photovoltage phenomena: theory, experiment, and applications
Leeor Kronik,Yoram Shapira +1 more
TL;DR: The theoretical concepts, experimental tools, and applications of surface photovoltage (SPV) techniques are reviewed in detail in detail as discussed by the authors, where the theoretical discussion is divided into two sections: electrical properties of semiconductor surfaces and the second discusses SPV phenomena.
1.6K
Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputtering
William Paul,D. A. Anderson +1 more
TL;DR: In this paper, the properties of amorphous hydrogenated silicon are reviewed, with special emphasis placed on results obtained by the method of reactive sputtering in an argon-hydrogen plasma.
184
Origin of the photo-induced changes in hydrogenated amorphous silicon
TL;DR: In this article, the photo-induced effects follow from a metastable trapping of the excess free carriers at charged spinless defects which are present at equilibrium, and an alternative explanation based on the unique electronic structure of hydrogenated amorphous silicon is proposed and analyzed.
164
Preparation and Properties of High-Quality a-Si Films with a Super Chamber (Separated Ultra-High Vacuum Reaction Chamber)
Shinya Tsuda,Tsuyoshi Takahama,Masao Isomura,Hisaki Tarui,Yukio Nakashima,Yoshihiro Hishikawa,Noboru Nakamura,Tsugufumi Matsuoka,Hidenori Nishiwaki,Shoichi Nakano,Michitoshi Ohnishi,Yukinori Kuwano +11 more
TL;DR: In this article, a separated ultra-high vacuum (UHV) reaction chamber system, called the super chamber, has been newly developed, and a glass/textured TCO/pin/Ag a-Si solar cell, whose i-layer was fabricated in the Super chamber, was obtained.
85
Theory and experiment on the surface‐photovoltage diffusion‐length measurement as applied to amorphous silicon
TL;DR: In this article, the authors adapted the collection efficiency theory for low mobility solar cells proposed by Reichman to the analysis of the surface photovoltage experiment in amorphous silicon.
75
References
Reversible conductivity changes in discharge‐produced amorphous Si
D. L. Staebler,C. R. Wronski +1 more
TL;DR: In this paper, a new reversible photoelectronic effect was reported for amorphous Si produced by glow discharge of SiH4, where long exposure to light decreases both the photoconductivity and the dark conductivity.
3K
A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors
TL;DR: In this paper, a method for determining the minority carrier diffusion length in semiconductors is presented. But the method does not depend upon the specific form of the relationship between the surface photovoltage and the density of the excess minority carriers injected at the bulk edge of the surface space charge region.
338
Interpretation of steady-state surface photovoltage measurements in epitaxial semiconductor layers
TL;DR: In this paper, the steady-state surface photovoltage (SPV) method of measuring minority carrier diffusion length (L ) has been extended to the case of an epitaxial layer on a thick substrate.
76
XIII. Photovoltaic and Photoconductive Theory Applied to InSb
TL;DR: In this article, the distribution of photo-electrons and photo-holes in an intrinsic material was formulated for the photovoltaic effect and a value for the ambipolar di...
41
Surface Photovoltage Method Extended to Silicon Solar Cell Junction
TL;DR: In this article, the authors extended the surface photovoltage (SPV) method to the measurement of the minority carrier diffusion length in diffused semiconductor junctions of the type used in a silicon solar cell.
40