Journal Article10.1109/TED.2003.822345
Diffusion capacitance and laser diodes
J. Strologas,K. Hess +1 more
14
TL;DR: In this paper, the authors investigated the diffusion capacitance of a diode, as a function of the physical length of the diode and the carrier lifetimes in the narrow active region.
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Abstract: The well-known diffusion capacitance is critical in determining the modulation response of p-n junctions and particularly of laser diodes. In this brief, we investigate the diffusion capacitance of a diode, as a function of the physical length of the diode and the carrier lifetimes in the narrow active region. We show that diode length and lifetime together, and not just the lifetime (which is well known), determine the bandwidth of the diode.
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Citations
Applications of nanolasers.
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TL;DR: The fundamental advantages of nanolasers and the engineering challenges for their utilization in several practical applications are highlighted and the scientific and engineering challenges that remain are highlighted.
437
Efficient, High-Data-Rate, Tapered Oxide-Aperture Vertical-Cavity Surface-Emitting Lasers
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TL;DR: In this paper, a tapered oxide aperture was optimized to provide additional mode confinement without sacrificing its static low-loss performance, and the pad capacitance was reduced by using benzocyclobutene, removing the n-contact layer, and shrinking the pad dimension.
128
Field-effect transistors with layer-by-layer self-assembled nanoparticle thin films as channel and gate dielectric
Tianhong Cui,Yi Liu,Mo Zhu +2 more
TL;DR: In this article, the fabrication of inorganic field effect transistors (FETs) is described, which combines bottom-up layer-by-layer (LbL) nanoself assembly and top-down micromanufacturing techniques.
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Numerical model of capacitance in vertical-cavity surface-emitting lasers
Michał Wasiak,Patrycja Śpiewak,Philip Moser,Jarosław Walczak,Robert P. Sarzała,Tomasz Czyszanowski,James A. Lott +6 more
TL;DR: In this paper, a 3D numerical model of potential distribution in the device under a constant bias is used to determine resistances and capacitances of an appropriate equivalent circuit, which is verified by comparing the theoretical and measured impedance as a function of frequency Z(f).
23
High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)
S. A. Blokhin,N. A. Maleev,M. A. Bobrov,A. G. Kuzmenkov,A. V. Sakharov,V. M. Ustinov,V. M. Ustinov +6 more
TL;DR: In this paper, the main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity under amplitude modulation and ways to solve them have been considered.
19
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