Patent
Diffusion barrier for copper features
Nalin Kumar
- 15 Mar 1991
34
TL;DR: In this paper, a diffusion barrier which reduces the diffusion of a copper feature into an oxygen containing polymer is provided by a copper metal alloy, which is fabricated by coating a metal on a copper and heating the metal and copper feature to form an alloy of the copper feature and the metal, etching the non-alloyed metal which covers the alloy, and depositing an oxygen-containing polymer on the alloy.
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Abstract: A diffusion barrier which reduces the diffusion of a copper feature into an oxygen containing polymer is provided by a copper metal alloy. The diffusion barrier is fabricated by coating a metal on a copper feature, heating the metal and copper feature to form an alloy of the copper feature and the metal, etching the non-alloyed metal which covers the alloy, and depositing an oxygen containing polymer on the alloy. Preferably the metal is aluminum and a copper aluminum alloy diffusion barrier is at least 300 angstroms thick and contains at least 8 percent aluminum on the surface in contact with the polymer.
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Citations
Patent
Process for forming copper interconnect structure
Avgerinos V. Gelatos,Robert W. Fiordalice +1 more
- 13 Sep 1993
TL;DR: A copper metallization structure and process for the formation of electrical interconnections fabricated with pure copper metal is provided in this article, which includes an interface layer (22) intermediate to a dielectric layer (12), and a copper interconnect (30).
154
Patent
Multilevel metallization process using polishing
Ajay Krishnan,Nalin Kumar +1 more
- 15 Aug 1994
TL;DR: In this paper, a maskless process for forming a protected metal feature in a planar insulating layer of a substrate is disclosed, and the metal feature is surrounded and protected by the first and second barrier materials.
78
Patent
Method of forming a metal wiring in a semiconductor device
Sung Gyu Pyo
- 06 Jun 2001
TL;DR: In this paper, a method of forming a metal wiring in a semiconductor device is disclosed, in which a damascene pattern of an ultra-fine structure is filled with copper by CVD method, a CECVD method is disclosed by which a chemical enhancer layer for increasing the deposition speed of copper is formed, and the pattern is then filled by means of MOCVD method using a copper precursor which forms a copper wiring.
74
Patent
Process for semiconductor device fabrication having copper interconnects
Michal Edith Gross,Christoph Lingk +1 more
- 17 Aug 1999
TL;DR: In this article, a process for fabricating a semiconductor device with copper interconnects is described, and the average grain size of the copper is at least about 1 μm in at least one dimension.
66
Patent
Self-aligned via and contact interconnect manufacturing method
Chong E. Lee
- 08 Nov 1994
TL;DR: An integral via structure and contact manufacturing process with a first conductive layer patterning process section is described in this article, where a first dielectric (72) is deposited and planarized to expose top portions of the first via structure (52), and a second conductive (90) is deposined, making contact with the second via structures (52).
53
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Minoru Noda
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TL;DR: In this article, a gate pattern of a gate electrode 10 in a double-layered structure comprising heat resisting material films 3a and 3b having different etching characteristics is formed.
61
Patent
Method of making an electrical multilayer copper interconnect
Ju-Don T. Pan
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TL;DR: In this paper, a method of making an electrical multilayer copper interconnect in which the electrical lines are protected by an electroplated overcoat is described. But this method is not suitable for the case of single-layer interconnects.
52
Patent
Polyimide embedded conductor process
Carl W. Laakso,John J. Reagan,Robert L. Beckman +2 more
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Patent
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Ju-Don T. Pan
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TL;DR: In this paper, a laser beam is directed over the reacting layer in a desired pattern to interdiffuse the reacting and conductor layers and form a reaction product, which is used as an etch mask for etching away the reaction layer, the conductor layer, and the adhesion layer outside of the reaction product.
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