Journal Article10.1016/0038-1101(80)90029-5
Determination of interface-state parameters in a MOS capacitor by DLTS
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TL;DR: In this paper, a modification of the DLTS (Deep Level Transient Spectroscopy) technique for interface-state measurement is described in which the surface potential is used to determine the energy of the interface states contributing to the emission signal.
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Abstract: A modification of the DLTS (Deep Level Transient Spectroscopy) technique for interface-state measurement is described in which the surface potential is used to determine the energy of the interface states contributing to the emission signal. This technique allows an accurate and unambiguous determination of interface-state energies and cross sections. Expressions are determined for interface-state emission as a function of surface potential. Measurements of interface-state density and majority-carrier cross sections as functions of energy for n- and p-type MOS samples are presented.
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Citations
Analysis of the standard deviation of surface potential fluctuations in MOS interface from DLTS spectra
TL;DR: In this article, a computer program including the exponential temperature dependence of hole capture cross section, was developed to analyse temperature-scan DLTS spectra of a MOS structure; in the evaluation procedure, and are taken as fitting parameters.
1
Surface state characterization at the oxide-silicon and nitroxide-silicon interfaces
TL;DR: In this paper, the potential and limits of the nitroxide films as gate dielectrics for VLSI devices were investigated and the experimental results indicated that the nitridation process of thermally grown oxides significantly increases the flatband voltage, the oxide charge and the interface-state density.
1
A DLTS technique for surface state capture cross-section measurement of MOS diodes
TL;DR: In this article, a modified DLTS technique is proposed for direct measurement of capture cross-section of MOS surface states, and the nature of temperature and energy dependence σn is inferred from data analysis.
1
References
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TL;DR: In this paper, the capacitance transient measurements were extended to intermediate depth impurity and defect states in semiconductors, which greatly enhances the usefulness of capacitance techniques as a tool to study nonradiative recombination.
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Interface states in SiSiO2 interfaces
TL;DR: In this paper, a new technique was developed for analysis of the data which allows to obtain the density of states, the capture cross section, the surface potential and the dispersion parameter from the conductance and capacitance vs. frequency curves.
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Transient capacitance measurements of hole emission from interface states in MOS structures
M. Schulz,N. M. Johnson +1 more
TL;DR: In this paper, the authors measured the energy spectrum of MOS interface states and the capture cross section for holes in p-type silicon by transient capacitance spectroscopy and found that the measured distribution consists of acceptor states that extend from the conduction band into the lower half of the silicon forbidden band.
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Evidence for multiphonon emission from interface states in MOS structures
M. Schulz,N.M. Johnson +1 more
TL;DR: In this paper, a theoretical model that explains this behavior is lattice-relaxation multiphonon emission was proposed. But this model is not suitable for MOS structures.
87
V. A two stage model for deep level capture
TL;DR: In this article, it is argued that capture of a carrier into the ground state of a deep, charged trap will be preceded by capture into a shallow, excited state, and the temperature dependences of capture and re-emission are worked out as consequences of this two step model.
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