Journal Article10.1007/S11664-011-1614-0
Design and Modeling of HgCdTe nBn Detectors
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TL;DR: In this article, an n-type mercury cadmium telluride (HgCdTe) unipolar nBn infrared detector structure is proposed as a means of achieving performance limited by intrinsic thermal carrier generation without requirements for p-type doping.
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Abstract: An n-type mercury cadmium telluride (HgCdTe) unipolar nBn infrared detector structure is proposed as a means of achieving performance limited by intrinsic thermal carrier generation without requirements for p-type doping. Numerical modeling was utilized to calculate the current–voltage and optical response characteristics and detectivity values for HgCdTe nBn and p–n junction devices with a cut-off wavelength of 12 μm for temperatures between 50 K and 300 K. Calculations demonstrate similar dark current density, responsivity, and detectivity values within 10% for the long-wavelength infrared (LWIR) nBn detector compared with the p–n junction structure for temperatures from 50 K to 95 K. These results show that the HgCdTe nBn device may be a promising alternative for achieving high performance using a simplified device structure while circumventing issues related to p-type doping in current p–n junction technology such as achieving low, controllable doping concentrations, and serving as a basis for next-generation device structures.
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Citations
Unipolar barrier photodetectors based on van der Waals heterostructures
Yunfeng Chen,Yang Wang,Yang Wang,Zhen Wang,Yue Gu,Yan Ye,Xuliang Chai,Jiafu Ye,Yan Chen,Runzhang Xie,Yi Zhou,Zhigao Hu,Qing Li,Lili Zhang,Fang Wang,Peng Wang,Jinshui Miao,Jianlu Wang,Xiaoshuang Chen,Wei Lu,Peng Zhou,Weida Hu +21 more
- 25 May 2021
TL;DR: In this article, a band-engineered van der Waals heterostructures were used to construct visible and mid-wavelength infrared unipolar barrier photodetectors.
443
Progress, challenges, and opportunities for HgCdTe infrared materials and detectors
Abstract: This article presents a review on the current status, challenges, and potential future development opportunities for HgCdTe infrared materials and detectortechnology. A brief history of HgCdTe infrared technology is firstly summarized and discussed, leading to the conclusion that HgCdTe-based infrared detectors will continue to be a core infrared technology with expanded capabilities in the future due to a unique combination of its favourable properties. Recent progress and the current status of HgCdTe infrared technology are reviewed, including material growth,device architecture, device processing, surface passivation, and focal plane array applications. The further development of infrared applications requires that future infrared detectors have the features of lower cost, smaller pixel size, larger array format size, higher operating temperature, and multi-band detection, which presents a number of serious challenges to current HgCdTe-based infrared technology. The primary challenges include well controlled p-type doping, lower cost, larger array format size, higher operating temperature, multi-band detection, and advanced plasma dry etching. Various new concepts and technologies are proposed and discussed that have the potential to overcome the existing primary challenges that are inhibiting the development of next generation HgCdTeinfrared detectortechnology.
340
New concepts in infrared photodetector designs
TL;DR: New strategies in photodetector designs are reviewed, including barrier detectors, unipolar barrier photodiodes, multistage detectors and trapping detectors, some of these new solutions have emerged as a real competitor to HgCdTePhotodetectors.
Mid-wave infrared HgCdTe nBn photodetector
TL;DR: In this paper, a unipolar, barrier-integrated HgCdTe nBn photodetector with all n-type doping and a type-I band lineup is experimentally demonstrated.
138
EChO - Exoplanet Characterisation Observatory
Giovanna Tinetti,J. P. Beaulieu,Th. Henning,Michael Meyer,Giuseppina Micela,Ignasi Ribas,Daphne Stam,Mark R. Swain,Oliver Krause,Marc Ollivier,Emanuele Pace,B. M. Swinyard,Alan D. Aylward,R. van Boekel,Angioletta Coradini,T. Encrenaz,Ignas Snellen,M. R. Zapatero-Osorio,Jeroen Bouwman,James Y-K. Cho,V. Coudé de Foresto,Tristan Guillot,Mercedes Lopez-Morales,I. Mueller-Wodarg,Enric Palle,F. Selsis,Alessandro Sozzetti,Peter A. R. Ade,Nicholas Achilleos,Alberto Adriani,Craig B. Agnor,Cristina Afonso,C. Allende Prieto,Gáspár Á. Bakos,Rosemary Barber,M. J. Barlow,V. Batista,Peter F. Bernath,Bruno Bézard,Pascal Bordé,Linda R. Brown,Arnaud Cassan,C. Cavarroc,Angela Ciaravella,Charles S. Cockell,A. Coustenis,Camilla Danielski,L. Decin,R. de Kok,O. D. S. Demangeon,Pieter Deroo,Peter Doel,Pierre Drossart,Leigh N. Fletcher,Mauro Focardi,François Forget,S. J. Fossey,P. Fouque,J. Frith,Marina Galand,Patrick Gaulme,J. I. González Hernández,Olivier Grasset,Davide Grassi,John Lee Grenfell,Matthew Joseph Griffin,Caitlin A. Griffith,Ulrich Grözinger,Manuel Guedel,Patrick Guio,Olivier Hainaut,Robert J. Hargreaves,Peter H. Hauschildt,Kevin Heng,D. Heyrovsky,Ricardo Hueso,Patrick G. J. Irwin,Lisa Kaltenegger,Pierre Kervella,David M. Kipping,Tommi Koskinen,Géza Kovács,A. La Barbera,Helmut Lammer,E. Lellouch,Giuseppe Leto,M. Lopez Morales,M. A. Lopez Valverde,Manuel López-Puertas,C. Lovis,Antonio Maggio,Jean-Pierre Maillard,J. Maldonado Prado,J. B. Marquette,F. J. Martin-Torres,Pierre F. L. Maxted,Steve Miller,Sergio Molinari,D. Montes,Amaya Moro-Martin,J. I. Moses,O. Mousis,N. Nguyen Tuong,Richard P. Nelson,G. S. Orton,Eric Pantin,Enzo Pascale,Stefano Pezzuto,D. J. Pinfield,Ennio Poretti,Raman K. Prinja,Loredana Prisinzano,J. M. Rees,Ansgar Reiners,B. Samuel,Agustín Sánchez-Lavega,J. Sanz Forcada,Dimitar Sasselov,Giorgio Savini,Bruno Sicardy,Andrew Smith,Lars Stixrude,Giovanni Strazzulla,Jonathan Tennyson,M. Tessenyi,Gautam Vasisht,Sandrine Vinatier,Serena Viti,Ingo Waldmann,Glenn J. White,Thomas Widemann,Robin Wordsworth,Roger V. Yelle,Yuk L. Yung,Sergei N. Yurchenko +134 more
TL;DR: The Exoplanet Characterisation Observatory (EChO) as mentioned in this paper is a mission concept specifically geared for this purpose, providing simultaneous, multi-wavelength spectroscopic observations on a stable platform that will allow very long exposures.
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TL;DR: In this article, a physics-based full three-dimensional (3D) numerical simulation of simultaneous two-color medium-wave infrared longwave infrared (MWIR-LWIR) and LWIR-Very-Long-Wave infrared (VLWIR), detectors is presented.
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Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors
TL;DR: In this article, it was shown that the nBn photodetector, which was originally designed to eliminate dark current arising from generation-recombination mechanisms, also effectively eliminates surface leakage currents.
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Behavior of implantation‐induced defects in HgCdTe
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