Proceedings Article10.1109/IEDM.2017.8268359
Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices
Dong Ji,Chirag Gupta,Silvia H. Chan,Anchal Agarwal,Wenwen Li,Stacia Keller,Umesh K. Mishra,Srabanti Chowdhury +7 more
- 01 Dec 2017
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TL;DR: In this paper, a vertical GaN OG-FET with a 10 nm UID-GaN channel interlayer and a 50 nm in-situ Al 2 O 3 gate dielectric has been successfully demonstrated and scaled for higher current operation.
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Abstract: A normally off (V th = 4.7 V) vertical GaN OG-FET with a 10 nm UID-GaN channel interlayer and a 50 nm in-situ Al 2 O 3 gate dielectric has been successfully demonstrated and scaled for higher current operation. By using a novel double field-plated structure for mitigating peak electric field, a high off-state breakdown voltage over 1.4 kV was achieved with a low specific on-state resistance (RON, SP) of 2.2 mΩ.cm2. The MOCVD regrown 10 nm GaN channel interlayer enabled a channel resistance lower than 10 Qmm and an average channel electron mobility of 185 cm2/Vs. The fabricated large-area transistor with a total area of 400 μm × 500 μm offered a breakdown voltage of 900 V and an on-state resistance (R on ) of 4.1 Q. Results indicate the potential of vertical GaN OG-FETs for over kV range of power electronics applications.
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Citations
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
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Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
Koon Hoo Teo,Yuhao Zhang,Nadim Chowdhury,Shaloo Rakheja,Rui Ma,Qingyun Xie,Eiji Yagyu,Koji Yamanaka,Kexin Li,Tomas Palacios +9 more
TL;DR: In this article, the authors provide a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability, which is a key missing piece to realize the full GaN platform with integrated digital, power, and RF electronics technologies.
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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
Fanming Zeng,Judy Xilin An,Guangnan Zhou,Wenmao Li,Hui Wang,Tianli Duan,Jiang Lingli,Hongyu Yu +7 more
TL;DR: In this paper, the authors review recent progress in AlGaN/GaN HEMTs, including the following sections: challenges in device fabrication and optimizations, and some promising device structures from simulation studies.
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Multidimensional device architectures for efficient power electronics
TL;DR: A review of multidimensional device architectures for power electronics can be found in this article , where the performance limits, scaling and material figure of merits of the different architectures are discussed.
Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling
TL;DR: An overview and discussion of the mechanisms, characterizations, modeling, and solutions for the degradation of dynamic on-resistance in GaN power devices is presented and a behavioral model with the dynamic degradation taken into consideration has been implemented for circuit analysis.
131
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TL;DR: In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.
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1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
Hui Nie,Quentin Diduck,Brian Joel Alvarez,Andrew P. Edwards,Brendan M. Kayes,Ming Zhang,Gangfeng Ye,Thomas Prunty,Dave Bour,Isik C. Kizilyalli +9 more
TL;DR: In this paper, vertical GaN transistors fabricated on bulk GaN substrates are discussed and a threshold voltage of 0.5 V and saturation current > 2.3 A are demonstrated.
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High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
TL;DR: In this article, a GaN vertical fin power field effect transistor structure with submicron fin-shaped channels on bulk GaN substrates was reported, and a combined dry/wet etch was used to get smooth fin vertical sidewalls.
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AlGaN/GaN current aperture vertical electron transistors with regrown channels
TL;DR: AlGaN/GaN current aperture vertical electron transistors with regrown aperture and source regions have been fabricated and tested as discussed by the authors, and they achieve a maximum source-drain current of 750 mA/mm, an extrinsic transconductance of 120 mS/mm.
Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
Huili Xing,D. S. Green,Haijiang Yu,Tom Mates,Peter Kozodoy,Stacia Keller,Steven P. DenBaars,Umesh K. Mishra +7 more
TL;DR: In this article, the role of memory effect, surface segregation, and diffusion associated with Mg was investigated in metalorganic chemical vapor deposition (MOCVD) and showed that a Mg-rich film is present on MOCVD as-grown GaN:Mg base layers and can be removed by acid etch.
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