Defect and Impurity Properties of Hexagonal Boron-nitride

TL;DR: The existence of NVRS in monolayer h-BN indicates fruitful interactions between defects, metal ions and interfaces, and can advance emerging applications on ultrathin flexible memory, printed electronics, neuromorphic computing, and radio frequency switches.

TL;DR: Li et al. as discussed by the authors proposed a porous monolayer boron nitride, named p-BN, based on first-principles calculations, which can exhibit strong adsorption in the visible light region.

TL;DR: In this paper, a set of hexagonal boron nitride (h-BN) epilayers were grown by metal-organic chemical vapor deposition (MOCVD) under different ammonia (NH3) flow rates to explore the role of nitrogen vacancies (VN) in the deep-level transitions.

TL;DR: In this paper, the authors show that the band gap in aluminum doped two-dimensional hexagonal boron nitride (2D-h-BN) layers strongly depends on Al concentration.

TL;DR: In this paper, the impact of strain on structure and magnetism of the H-FeCl2 monolayer by employing first-principles calculations was investigated, and it was shown that applying compressive strain can effectively enhance the ferromagnetism and perpendicular magnetocrystalline anisotropy of H-FECl2 for its application in high density data storage.

TL;DR: In this paper, a large area synthesis of hBN layer at a comparatively lower temperature using ammonia borane as precursor by microwave assisted surface wave plasma (MW-SWP) chemical vapour deposition (CVD) was reported.

TL;DR: In this paper, the electronic properties of the GeC monolayer are studied by the ab initio calculations, and the major modulation of band gap is due to the migration of C-p, Ge-p and Ge-d orbitals around the Feimi level.