Journal Article10.1063/1.4919108
Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaOx structures
Mustafa Akyol,Guoqiang Yu,Juan G. Alzate,Pramey Upadhyaya,Xiang Li,Kin L. Wong,Ahmet Ekicibil,Pedram Khalili Amiri,Kang L. Wang +8 more
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TL;DR: In this article, the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf, CoFeB|MgO and Hf|CoFeB•TaOx tri-layers was studied.
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Abstract: We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaOx tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field ( HzFL) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeB layer deterministically in Hf|CoFeB|TaOx. Based on the experimental results, the SOT magnitude ( HzFL per current density) in Hf|CoFeB|MgO (−14.12 Oe/107 A cm−2) was found to be almost 13× larger than that in Hf|CoFeB|TaOx (−1.05 Oe/107 A cm−2). The CoFeB thickness dependence of the magnetic switching behavior,...
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Citations
Enhanced Spin-Orbit Torque and Low Critical Current Density in Pt100-xRux[CoNi]/Ru Multilayer for Spintronic Devices
Hongzhan Ju,Xiaotian Zhao,Wei Liu,Yuhang Song,Long Liu,Jun Ma,Yang Li,Jinxiang Wu,Zhidong Zhang +8 more
TL;DR: Researchers develop a Pt100-xRux[CoNi]/Ru multilayer for spintronic devices, achieving a high spin-orbit torque efficiency (0.132) and low critical current density (8 x 10^5 A/cm^2) with enhanced performance and reduced energy consumption.
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