Journal Article10.1166/JNN.2017.12428
Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC
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TL;DR: It was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.
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Abstract: We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm²/V·s and 3.23 × 10¹³ cm⁻², respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.
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Citations
Drain-Bias-Dependent Study of Reverse Gate-Leakage Current in AlGaN/GaN HFETs
TL;DR: In this paper, the gate-leakage of AlGaN/GaN heterostructure field-effect transistors (HFETs) is investigated at different values of drain-source voltage (from 0 to 10 V).
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Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire
Uiho Choi,Hyun-Seop Kim,Kyeongjae Lee,Donghyeop Jung,Taemyung Kwak,Taehoon Jang,Yongjun Nam,Byeongchan So,Myoung-Jin Kang,Kwang-Seok Seo,Min Han,Seokgyu Choi,Sang-Min Lee,Ho-Young Cha,Okhyun Nam +14 more
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Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures
TL;DR: In this paper, the effect of the buffer layer on the structural and electrical properties of an AlGaN/GAN/AlxGa1−xN double heterojunction high electron mobility transistor (HEMT) was investigated.
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