Controlling the Schottky barrier at MoS 2/metal contacts by inserting a BN monolayer
M. Farmanbar,Geert Brocks +1 more
TL;DR: In this article, the Schottky barrier for high work function (≳4.7 eV) metals was shown to be 0.1-0.3 eV below the conduction band edge of MoS 2 for low work function metals, due to metal-MoS 2 interaction.
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Abstract: Making a metal contact to the two-dimensional semiconductor MoS 2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott rule for high work function (≳4.7 eV) metals, the Fermi level is pinned at 0.1–0.3 eV below the conduction band edge of MoS 2 for low work function metals, due to the metal-MoS 2 interaction. Inserting a boron nitride (BN) monolayer between the metal and the MoS 2 disrupts this interaction, and restores the MoS 2 electronic structure. Moreover, a BN layer decreases the metal work function of Co and Ni by ∼2 eV, and enables a lineup of the Fermi level with the MoS 2 conduction band. Surface modification by adsorbing a single BN layer is a practical method to attain vanishing Schottky barrier heights.
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Citations
Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions.
Yuan Liu,Yuan Liu,Jian Guo,Enbo Zhu,Lei Liao,Sung-Joon Lee,Mengning Ding,Imran Shakir,Vincent Gambin,Yu Huang,Xiangfeng Duan +10 more
TL;DR: The creation of van der Waals metal–semiconductor junctions is reported, in which atomically flat metal thin films are laminated onto two-dimensional semiconductors without direct chemical bonding, creating an interface that is essentially free from chemical disorder and Fermi-level pinning.
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Contact engineering for 2D materials and devices
TL;DR: The phenomenon of Fermi level pinning at the metal/2D contact interface, the Schottky versus Ohmic nature of the contacts and various contact engineering approaches including interlayer contacts, phase engineered contacts, and basal versus edge plane contacts are elucidated.
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Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier.
TL;DR: 2D metals are used, which are bounded with 2D semiconductors through van der Waals interactions, and the Schottky barrier at the metal-semiconductor junction becomes tunable and can vanish with proper 2D metals.
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High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
Jingli Wang,Qian Yao,Chun Wei Huang,Xuming Zou,Lei Liao,Shanshan Chen,Zhiyong Fan,Kai Zhang,Wei Wu,Xiangheng Xiao,Changzhong Jiang,Wen-Wei Wu +11 more
TL;DR: High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS1.
472
Biosensors Based on Two-Dimensional MoS2
TL;DR: In this article, the current progress on 2D MoS2 based biosensors is presented and the prospects for future possibilities of expanding its applications for a variety of biosensing applications are discussed.
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