Proceedings Article10.1117/12.557747
Contact hole reticle optimization by using interference mapping lithography (IML)
Robert John Socha,Douglas Van Den Broeke,Stephen Hsu,J. Fung Chen,Thomas Laidig,Noel Corcoran,Uwe Hollerbach,Kurt E. Wampler,Xuelong Shi,Willard E. Conley +9 more
- 20 Aug 2004
- Vol. 5446, pp 516-534
59
TL;DR: In this article, the theory of interference mapping lithography (IML) is presented for low k1 (k1 < 0.4) contact hole imaging, and techniques to optimize a binary mask or a CPL mask for maximizing the exposure latitude (EL) or depth of focus (DOF).
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Abstract: The theory of interference mapping lithography (IML) is presented for low k1 (k1<0.4) contact hole imaging. IML with a coherent source is shown to be analogous to methods used in creating a Fresnel lens. With IML for a partially coherent source, the interference map is calculated by using the first eigenfunction of the transmission cross coefficient (TCC). From this interference map, clear 0° AFs and for clear 180° AFs are placed in the optimal location. Thus, IML is a method to place AFs via a model. From the interference map, a method for creating a CPL mask is demonstrated. Using IML, techniques to optimize a binary mask or a CPL mask are presented for maximizing the exposure latitude (EL) or depth of focus (DOF). These techniques are verified with simulation. Using IML for maximum EL, a CPL mask with 100nm (k1=0.39) contacts was created and exposed on an ASML /1100 ArF scanner using NA of 0.75 and Quasar illumination (σin=0.72, σout=0.92, span angle=20°). Measurements on the exposed wafers show that IML CPL results in printing 100nm contacts through pitch (200nm minimum pitch to isolated) with 0.45μm DOF at 10% EL.
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Citations
Patent
Method and apparatus of model-based photomask synthesis
Abdurrahman Sezginer
- 13 Aug 2005
TL;DR: In this paper, an apparatus and method for improving image quality in a photolithographic process includes calculating a figure of demerit for a mask function and then adjusting the mask function to reduce the figure.
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Fast pixel-based mask optimization for inverse lithography
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Mask optimization for arbitrary patterns with 2D-TCC resolution enhancement technique
TL;DR: A new resolution enhancement technique named 2D-TCC technique is proposed, which can enhance resolution of line patterns as well as that of contact hole patterns by the use of an approximate aerial image.
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Pixelated source mask optimization for process robustness in optical lithography
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TL;DR: This paper develops a pixelated SMO using inverse imaging, and incorporates the statistical variations explicitly in an optimization framework to demonstrate its efficacy in process robustness enhancement.
Extension of the 2D-TCC technique to optimize mask pattern layouts
Manabu Hakko,Kenji Yamazoe,Miyoko Kawashima,Yoshiyuki Sekine,Masakatsu Ohta,Tokuyuki Honda +5 more
- 02 May 2008
TL;DR: In this paper, the authors investigated the 2D-TCC technique for an isolated line of 45 nm width and showed that the 2-D-tCC technique can be extended to the optimization of 45-nm line patterns.
92
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