Journal Article10.1080/14786437008221061
Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors
E. A. Davis,Nevill Mott +1 more
4K
TL;DR: In this article, the experimental evidence concerning the density of states in amorphous semiconductors and the ranges of energy in which states are localized is reviewed; this includes d.c and a.c. conductivity, drift mobility and optical absorption.
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Abstract: The experimental evidence concerning the density of states in amorphous semiconductors and the ranges of energy in which states are localized is reviewed; this includes d.c. and a.c. conductivity, drift mobility and optical absorption. There is evidence that for some chalcogenide semiconductors the model proposed by Cohen, Fritzsche and Ovshinsky (1969) should be modified by introducing a band of localized states, near the centre of the gap. The values of C, when the d.c. conductivity is expressed as C exp (- E/kT), are considered. The behaviour of the optical absorption coefficient near the absorption edge and its relation to exciton formation are discussed. Finally, an interpretation of some results on photoconductivity is offered.
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References
•Book
Conduction in non-crystalline materials
Nevill Mott
- 01 Jan 1987
TL;DR: In this paper, an approximate theoretical estimate is given of the depth of the minimum at which the one-electron states become localized so that σE(0) vanishes; this turns out to be such that N(E F)/N(EF) free is about ⅓.
3.2K
Conduction in glasses containing transition metal ions
TL;DR: In this article, a discussion of conduction in glasses containing transition metal ions is presented, and the Miller-Abrahams term and polaron hopping term tend to zero, giving a decreasing slope of the ln p versus 1/T curve.
2.6K
Electrons in disordered structures
TL;DR: In this article, the authors discuss the role of disordered structures in the evolution of the electron in disordered structure and propose a method to find disordered electron structures in a graph.
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Electronic Transport in Amorphous Silicon Films
P. G. Le Comber,W. E. Spear +1 more
TL;DR: Drift mobility and conductivity measurements were made between 290 and 85 K on amorphous silicon specimens prepared by glow-discharge decomposition of silane as mentioned in this paper, and the results suggest that excess electrons drift in the extended states with a mobility of about 10
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