Patent
Composition for etching, and etching method
Hara Yasushi,Takahashi Fumiharu,史治 高橋 +2 more
- 14 Jun 2007
26
TL;DR: In this paper, an etchant which does not produce a silver residue when etching silver or a silver alloy, and does not vary an etching rate even when the etchant is repeatedly used, is provided.
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Abstract: PROBLEM TO BE SOLVED: To provide an etchant which does not produce a silver residue when etching silver or a silver alloy, and does not vary an etching rate even when the etchant is repeatedly used, and to provide an etching method. SOLUTION: The method for etching silver or the silver alloy includes employing a composition for etching the silver or the silver alloy, which includes a copper ion, nitric acid, phosphoric acid, a carboxylic acid, ammonia and/or an amine, wherein the carboxylic acid is one or more compounds selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, valeric acid, hexanoic acid, 2-ethyl hexanoic acid, benzoic acid, oxalic acid, succinic acid, glutaric acid, adipic acid, phthalic acid, maleic acid, citric acid, malic acid, tartaric acid, salicylic acid, glycine, alanine, aspartic acid, glutamic acid, ethylenediamine tetraacetic acid and nitrilotriacetic acid. COPYRIGHT: (C)2009,JPO&INPIT
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Citations
Patent
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Jae-Wan Park,Jung-Hun Lim,Jin-Uk Lee +2 more
- 06 Nov 2020
TL;DR: In this paper, a high selectivity composition for etching is proposed, which can selectively remove a nitride film while minimizing the etch rate of an oxide film, and does not have problems such as particle generation, which adversely affect the device characteristics.
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- 10 Jul 2015
TL;DR: In this article, the authors describe a composition for etching, a method for manufacturing the composition, and a method to fabricate a semiconductor using the same composition, which may include a first inorganic acid, at least one of silane inorganic acids produced by reaction between a second acid and a silane compound.
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- 15 Dec 2010
TL;DR: In this paper, a ruthenium-based metal was obtained by adding and mixing at least a bromine-containing compound, an oxidizing agent, a basic compound and water, which has a pH of 10 or more but less than 12.
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Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution
Hiromi Kiyose
- 03 Sep 2008
TL;DR: An additive containing a hexafluorosilicic acid solution (H 2 SiF 6 + H 2 O) is sequentially inputted into a phosphoric acid solution pooled in an immersion bath from an additive input mechanism as mentioned in this paper.
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- 24 Oct 2012
TL;DR: In this paper, a lens array is provided with a prism adhered within a prism placement recessing section by an adhesive, wherein retention of air-bubbles in the adhesive on an optical path of light of each light-emitting element between the prism placement and the prism is prevented by a first air bubble retention prevention recessing Section and a second air bubble removal Section.
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Miwa Naoki,Muto Yoshio +1 more
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TL;DR: In this paper, a sacrificing oxide film is formed in a trench 26 by using a mixture solution of an alkaline solution and an anionic surfactant having an affinity with both silicon, of a semiconductor material and the alkaline solutions to reduce irregularities on an inner wall 28 of the trench 26.
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Patent
Etching composition and etching method
Hara Yasushi,Shimono Tetsusuu,Takahashi Fumiharu,哲数 下野,史治 高橋 +4 more
- 25 Jul 2006
TL;DR: In this article, the etching selection ratio of silicon nitride to silicon oxide is not reduced even at a high temperature for an etching composition of silicon polysilicon nitride.
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Cleaning method of semiconductor substrate
Nakamura Akinobu,Hase Ushio +1 more
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TL;DR: In this paper, a process for dispersing noble metal and a noble metal oxide film which are stuck to a part except for a desired part in first cleaning fluid by cleaning is provided.
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Composition of etchant for multilayer film including transparent electroconductive film
Kenji Oshiro,Takao Yamaguchi,研二 大城,隆雄 山口 +3 more
- 01 Nov 2002
TL;DR: In this article, an inexpensive etchant for collectively etching a multilayer film including a transparent electroconductive film and a metallic film by one operation with one liquid, without selectively etching each film, and for inhibiting side etching of each film.
18
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Composition for etching
Hara Yasushi,Takahashi Fumiharu,Masami Zenitani,まさみ 銭谷,史治 高橋 +4 more
- 20 Jul 2010
TL;DR: In this article, a metal-stacked film including an aluminum metal film or an aluminum alloy film and a molybdenum metal film was collectively etched using a composition for etching.
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