Patent
Cmos image sensor
Carlos J. R. P. Augusto
- 09 Dec 2003
167
TL;DR: Light sensing devices are monolithically integrated with CMOS devices on thin-film Silicon-On-insulator (TF-SOI) or Thin-Film Germanium-OnInsulator (GeOI) substrates.
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Abstract: Light sensing devices are monolithically integrates with CMOS devices on Thin-Film Silicon-On-insulator (TF-SOI) or Thin-Film Germanium-On-Insulator (TF-GeOI) substrates Photo-diode active layers are epitaxially grown on the front-side of the substrate and after full processing of the front-side of the substrate, the substrate material is removed under the buried insulator (buried oxide) Monolithically integrated structures are then fabricated on the back of the buried oxide The back-side is then bonded to a new substrate that is transparent to the wavelengths of interest For example, quartz, sapphire, glass, or plastic, are suitable for the visible range Back-side illumination of the sensor matrix is thereby allowed, with light traveling through the structures fabricated on the back of the substrate, opposite to the side on which CMOS is made
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Citations
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Patent
Method for making backside illuminated image sensor
Yacov Malinovich,Ephie Koltin +1 more
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TL;DR: In this article, a back-illuminated CMOS image sensor including a matrix of pixels (e.g., CMOS APS cells) is fabricated on a semiconductor substrate.
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X-y address type solid state image pickup device and method of producing the same
Ryoji Suzuki,Keiji Mabuchi,Tomonori Mori +2 more
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TL;DR: In this article, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer.
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Patent
Light-sensing device
Carlos J. R. P. Augusto
- 15 Sep 2003
TL;DR: In this article, a method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices was proposed. But the method was not implemented with epitaxially deposited films on the following substrates: Silicon Bulk, Thick-Film and Thin-Film Silicon-On-Insulator (SOI), Germanium Bulk, thick-film and thin-filtering Germanium-on-insulator (GeOI), the active areas having defined polarities.
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Patent
Backside illumination of CMOS image sensor
Robert H. Nixon,Nicholas A. Doudoumopoulos,Eric R. Fossum +2 more
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TL;DR: In this article, a CMOS image sensor die is fabricated and packaged to allow the light sensitive area of the die to be illuminated from either the front side or the backside, or both.
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Patent
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Ronald M. Gluck,Edmund K. Banghart,Madhav Mehra +2 more
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TL;DR: In this paper, a backside illuminated image sensor fabricated upon a thinned silicon layer bonded to a quartz wafer is described, where a borosilicate glass (BSG) layer interposed between the thin-ned silicon device layer and quartz support serves as a doping source for the back-surface accumulating electrostatic potential and serves to minimize stress associated with the thermal expansion differences associated with quartz and silicon.
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