Journal Article10.1109/LED.2013.2297451
Charge-Plasma Based Process Variation Immune Junctionless Transistor
Chitrakant Sahu,Jawar Singh +1 more
196
TL;DR: In this article, a charge-plasma concept is employed to induce n-region for the formation of source and drain for a n-channel junctionless transistor using appropriate metal work function electrodes.
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Abstract: In this letter, we report for the first time a distinctive approach of implementing a junctionless transistor (JLT) without doping (doping-less) the ultrathin silicon film. A charge-plasma concept is employed to induce n-region for the formation of source and drain for a n-channel JLT using appropriate metal work function electrodes. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped JLT of identical dimensions. In conventional JLTs, the channel doping concentration is generally kept high to ensure high ON-state current, but it causes variation in threshold voltage, which may be due to process variations. The proposed device solves the problem of threshold voltage variability without affecting inherent advantages of JLTs.
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Citations
A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free Detection
Deepika Singh,Sunil Pandey,Kaushal Nigam,Dheeraj Sharma,Dharmendra Singh Yadav,Pravin N. Kondekar +5 more
TL;DR: In this article, a charge-plasma concept is introduced for the first time to implement a dielectric-modulated junctionless tunnel field effect transistor (DM-JLTFET) for biosensor label-free detection.
203
Electrostatic Doping in Semiconductor Devices
TL;DR: In this paper, the role of metal and semiconductor workfunctions, energy bandgap, and applied electric field and the interplay between them for the induced ED is discussed, and the effect of interface traps on the induced charge is also addressed.
143
Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications
TL;DR: A nonquasi-static RF model is adopted to analyze the behavior of the proposed ED-TFET in high frequency region and the modeled result shows excellentmatching with the Y-parameters upto 500 GHz.
128
Label Free Detection of Biomolecules Using Charge-Plasma-Based Gate Underlap Dielectric Modulated Junctionless TFET
Girish Wadhwa,Balwinder Raj +1 more
TL;DR: In this paper, a charge-plasma-based gate underlap dielectric modulated junctionless tunnel field effect transistor (DM-JLTFET) was proposed for biomolecule detection.
113
Potential Benefits and Sensitivity Analysis of Dopingless Transistor for Low Power Applications
Chitrakant Sahu,Jawar Singh +1 more
TL;DR: In this paper, the authors report the potential benefits of dopingless double-gate field effect transistor (DL-DGFET) designed on ultrathin silicon on insulator film for low power applications.
93
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