Journal Article10.1016/S0040-6090(02)00193-1
Characteristics of c-axis oriented large grain ZnO films prepared by low-pressure MO-CVD method
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TL;DR: The resistivity of the Ga-doped polycrystalline ZnO (0.0, 0.0, 0.2 ) films with large grains was found to be 2.2×10 20 /cm 3 and 40.9 cm 2 /V 2 ) as mentioned in this paper.
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About: This article is published in Thin Solid Films. The article was published on 22 May 2002. The article focuses on the topics: Electrical resistivity and conductivity & Photoluminescence.
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Citations
Epitaxial growth of ZnO films
TL;DR: In this article, the authors review the growth of ZnO epitaxial films by PLD, MBE, MOCVD and sputtering under their various aspects, substrates, precursors, reaction chemistry, assessment of the layers etc.
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Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications
Elvira Fortunato,Leandro Raniero,L. Silva,Alexandra Gonçalves,Ana Pimentel,Pedro Barquinha,Hugo Águas,Luís Pereira,Gonçalo Gonçalves,Isabel M.P.L.V.O. Ferreira,Elamurugu Elangovan,Rodrigo Martins +11 more
TL;DR: Transparent and highly conducting gallium zinc oxide (GZO) films were successfully deposited by RF sputtering at room temperature as mentioned in this paper, achieving a lowest resistivity of ∼2.8×10−4
169
Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant
TL;DR: In this article, the authors investigated the self-limiting ALD behavior of ZnO thin films on SiO2/Si substrates using Zn(C2H5)2 and O3 as the precursor and oxidant, respectively, at substrate temperatures ranging from 230 to 300 °C.
156
High-quality ZnO films prepared on Si wafers by low-pressure MO-CVD
TL;DR: In this paper, high quality ZnO films were successfully prepared on Si wafers by low-pressure MO-CVD using zinc acetylacetonate (Zn(C5H7O2)2) and oxygen.
98
Structural and optical properties of ZnO thin films deposited on quartz glass by pulsed laser deposition
TL;DR: In this article, a ZnO thin film with typical c-axis orientation was successfully deposited on quartz glass substrates by pulse laser ablation of Zn target in oxygen atmosphere at a relatively low temperature range of 100 −250 8C.
96
References
Structures and SAW properties of rf‐sputtered single‐crystal films of ZnO on sapphire
T. Mitsuyu,S. Ono,K. Wasa +2 more
TL;DR: In this paper, surface acoustic wave properties, including phase velocity, a coupling coefficient, a propagation loss, and a temperature coefficient of delay, were measured for SAW propagating along the c-axis of the ZnO films, on the (0112) planes of sapphire.
224
Preparation of crystallized zinc oxide films on amorphous glass substrates by pulsed laser deposition
TL;DR: In this paper, the effect of the rocking curve of the x-ray diffraction was evaluated by full width at half-maximum (FWHM) of the rock curve.
180
Substrate temperature dependence of electrical properties of ZnO:Al epitaxial films on sapphire (12̄10)
Yasuhiro Igasaki,Hiromi Saito +1 more
TL;DR: In this article, ZnO:Al films were deposited on (1210) oriented sapphire substrates heated up to 400°C by rf magnetron sputtering from a znO target mixed with Al2O3 of 2 wt%.
150
Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates
TL;DR: In this article, a plasma assisted molecular-beam epitaxy of ZnO epilayers on MgAl2O4(111) substrates is described, where acid mixed by H2SO4 and H3PO4 is used for substrate etching, which provides atomically flat surfaces with a regular terrace array.
103
Transparent and Conductive ZnO Thin Films Prepared by Atmospheric-Pressure Chemical Vapor Deposition Using Zinc Acetylacetonate
TL;DR: In this article, high transparent and conductive undoped and impurity-doped ZnO thin films have been obtained by atmospheric pressure chemical vapor deposition (CVD) using Zn(C5H7O2)2 as a zinc source.
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