Journal Article10.1063/1.2975183
Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam
Sung Woo Kim,Byoung Jae Park,Se Koo Kang,Bo Hyun Kong,Hyung Koun Cho,Geun Young Yeom,Sungho Heo,Hyunsang Hwang +7 more
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TL;DR: In this article, partial fluorination of Al2O3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated.
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Abstract: The partial fluorination of Al2O3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam resulted in a 5-nm-thick AlOxFy layer on the ONA by replacing some Al–O to Al–F. The electrical properties such as leakage current and memory window characteristics were improved after fluorination of the ONA, possibly due to the improved charge trapping characteristics through the formation of an AlOxFy layer on the Al2O3 without changing the blocking layer thickness.
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Citations
Linear-Sweep Thermammetry Study on Corrosion Behavior of Al Current Collector in Ionic Liquid Solvent
TL;DR: In this article, the corrosion behavior of A1 foil as the current collector for lithium-ion batteries is studied by linear-sweep thermammetry, which reveals that this Al surface is covered by Al-F compound (presumably AlF 3 ).
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•Journal Article
High-performance HfO2 gate dielectries fluorinated by postdeposition CF4 plasma treatment
TL;DR: In this paper, the gate leakage current, breakdown voltage, capacitance-voltage hysteresis, and charge trapping characteristics of fluorinated HfO 2 gate dielectrics were investigated.
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Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with fluorinated Al2O3 as gate dielectrics
TL;DR: In this paper, the binding energy spectrum and valance band spectrum variations in fluorinated-Al2O3/AlGaN/GaN MISHEMTs with gate dielectrics were studied.
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The Zr Modified γ-Al2O3 Catalysts for Stable Hydrolytic Decomposition of CF4 at Low Temperature
TL;DR: In this article , Zr/γ-Al2O3 catalysts were developed for CF4 decomposition, and the results of NH3-TPD and FT-IR analyses suggest that the amount of Lewis acidity sites on catalyst surface increases significantly after the introduction of Zr, thereby enhancing the activity of catalyst for CF 4 decomposition.
References
Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates
TL;DR: Al2O3 films with thicknesses ranging from 30 to 3540 A were grown in a viscous flow reactor using ALD with trimethylaluminum and water as the reactants as mentioned in this paper.
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The effect of fluorine in silicon dioxide gate dielectrics
Peter Wright,Krishna C. Saraswat +1 more
TL;DR: In this article, the effect of postoxide-growth fluorine incorporation in gate dielectrics is reported, and it is explained by a model wherein fluorine bonds to silicon, and the displaced oxygen grows the additional oxide.
283
Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory
TL;DR: In this article, the authors present a device structure of SiO2∕SiN∕Al2O3 (SANOS), which concentrates the electric fields across the tunnel oxide and SiN, and releases it across the blocking oxide under program and erase mode.
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Band diagram of the AlF3/SiO2/Si system
TL;DR: In this paper, the authors deduce a microscopic picture where the energetic eigenstates of the singly and doubly occupied fluorine (F) vacancies surround the Fermi energy from the density-functional calculations of stoichiometric and understoichiometric AlF3.
Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate
TL;DR: In this article, fluorine incorporation into the HfO2 gate dielectrics by post CF4 plasma treatment was proposed to improve the electrical characterization, including capacitance-voltage hysteresis and currentvoltage behaviors.
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