Journal Article10.1063/1.336491
Cathodoluminescence scanning electron microscopy of semiconductors
B. G. Yacobi,D. B. Holt +1 more
266
TL;DR: In this paper, a review of applications of cathodoluminescence scanning electron microscopy in the assessment of optical and electronic properties of semiconductors is presented, including information on band structure and impurity levels derived from spectroscopic cathodescence, analysis of dopant concentrations at a level which is in some cases several orders of magnitude better than x-ray microanalysis.
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Abstract: This paper reviews applications of cathodoluminescence scanning electron microscopy in the assessment of optical and electronic properties of semiconductors. The assessment includes, for example, information on band structure and impurity levels derived from spectroscopic cathodoluminescence, analysis of dopant concentrations at a level which is in some cases several orders of magnitude better than x‐ray microanalysis, and mapping of carrier lifetimes and defects. Recent advances in both the various cathodoluminescence techniques and the processes leading to electron‐beam‐induced luminescence in semiconductors are reviewed. Possible future trends are also discussed.
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Citations
FIB-SEM cathodoluminescence tomography: practical and theoretical considerations.
TL;DR: The objective of this study is to assess the possibilities of combining FIB‐SEM tomography with cathodoluminescence (CL) imaging.
16
Distribution of polarized-cathodoluminescence around the structural defects in ZnSe/GaAs(001) studied by transmission electron microscopy
Tadashi Mitsui,Naoki Yamamoto +1 more
TL;DR: In this paper, the spatial distribution of polarized cathodoluminescence emissions from thin ZnSe films grown by metalorganic vapor phase epitaxy method on GaAs(001) has been examined by a low-temperature polarized CL measurement system combined with a transmission electron microscope.
16
Optical Properties of As‐Grown and Process‐Induced Stacking Faults in 4H‐SiC
TL;DR: In this paper, a review of recent photoluminescence, cathodolumininescence and micro-photoluminecence studies that have been made to investigate the electronic properties of as-grown and/or process-induced stacking faults (SFs) in silicon carbide (SiC) epitaxial layers is presented.
16
High-resolution photocurrent microscopy using near-field cathodoluminescence of quantum dots
Heayoung P. Yoon,Youngmin Lee,Christopher D. Bohn,Seung Hyeon Ko,Anthony G. Gianfrancesco,Jonathan S. Steckel,Seth Coe-Sullivan,A. Alec Talin,Nikolai B. Zhitenev +8 more
TL;DR: In this article, a fast, versatile photocurrent imaging technique was proposed to visualize the local photo response of solar energy devices and optoelectronics using near-field cathodoluminescence (CL) from a homogeneous quantum dot layer.
16
Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures
TL;DR: In this paper, the authors review the study of cathodoluminescence (CL) microscopy applied in semiconductor nanostructures for the dislocation, carrier diffusion, band structure, doping level and exciton recombination.
16
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