Journal Article10.1109/LED.2012.2210019
Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors
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TL;DR: In this paper, the bridged-grain technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors.
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Abstract: Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.
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Citations
Low temperature polycrystalline silicon with single orientation on glass by blue laser annealing
Seong-Hyun Jin,Seungpyo Hong,Mallory Mativenga,Bo-Ram Kim,Heung Hyun Shin,Jong Kab Park,Tae-Woong Kim,Jin Jang +7 more
TL;DR: In this paper, the authors achieved low-temperature polycrystalline silicon (LTPS) thin-films with a single orientation on glass by using continuous wave blue laser annealing (BLA) of amorphous silicon (a-Si).
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Lateral Grain Growth of Amorphous Silicon Films With Wide Thickness Range by Blue Laser Annealing and Application to High Performance Poly-Si TFTs
TL;DR: In this paper, a continuous-wave blue diode laser of wavelength 445 nm was used for lateral grain growth of amorphous silicon (a-Si) using a poly-Si thin-film transistors.
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Investigation of High-Performance ITO-Stabilized ZnO TFTs With Hybrid-Phase Microstructural Channels
TL;DR: In this paper, the properties of hybrid-phase microstructural indium tin oxide-stabilized ZnO thin films and the relevant high-performance thin-film transistors (TFTs) were systematically investigated.
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Effect of Grain Boundary Protrusion on Electrical Performance of Low Temperature Polycrystalline Silicon Thin Film Transistors
TL;DR: In this article, the impact of grain boundary protrusion on the electrical properties of low temperature polycrystalline silicon thin film transistors was analyzed using atomic force microscopy and transmission electron microscopy images.
Characterization of DC-Stress-Induced Degradation in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors
TL;DR: In this article, the dc-stress-induced degradation in bridged-grain (BG) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is systemically characterized and investigated.
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