Bayesian Inference-Based Behavioral Modeling Technique for GaN HEMTs

TL;DR: A new, frequency-domain, behavioral modeling methodology for gallium nitride (GaN) high-electron-mobility transistors (HEMTs), based on the Bayesian inference theory, is presented, with results showing that the proposed approach demonstrates improved accuracy, while at the same time, alleviating the well-known ANN overfitting issue.

Abstract: A new, frequency-domain, behavioral modeling methodology for gallium nitride (GaN) high-electron-mobility transistors (HEMTs), based on the Bayesian inference theory, is presented in this paper. Several different probability distribution (kernel) functions are examined for the Bayesian-based modeling architecture, with the optimal kernel function identified through experimental testing. These results are compared to an alternative approach based on the artificial neural networks (ANNs), with the data showing that the proposed approach demonstrates improved accuracy, while at the same time, alleviating the well-known ANN overfitting issue. Model verification is performed at the fundamental and harmonic frequencies using the identified optimal kernel, through comparisons with simulated data from a reference nonlinear circuit model, and with experimental data from separate 2- and 10-W GaN HEMT devices, over a wide range of load conditions. The models can predict accurately the optimal area of the fundamental output power on the Smith chart and the area of optimal power efficiency. Furthermore, the ability of the model to interpolate across input power levels and input frequencies is also tested, with excellent fidelity to the simulated and measured data obtained.