Journal Article10.1088/1361-6463/AB4D7B
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
Zhongjie Ren,Zhongjie Ren,Huabin Yu,Zhongling Liu,Danhao Wang,Chong Xing,Haochen Zhang,Chen Huang,Shibing Long,Haiding Sun +9 more
TL;DR: In this article, the authors summarize the recent progress on various energy band designs and engineering of DUV LEDs, with particular of interest paid on the various approaches in band engineering of the electron blocking layer, quantum well, quantum barrier and the implementation of many novel structures such as tunnel junctions, ultrathin quantum heterostructures to enhance their efficiency.
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Abstract: III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) are identified as the promising candidate for energy-efficient, environment-friendly and robust UV lighting source in the application of water/air purification, sterilization, and bio-sensing. However, the state-of-art DUV LED performance is far from satisfaction for commercialization owing to its low internal quantum efficiency, large current leakage and efficiency droop at high current injection, etc. Extensive efforts have been devoted to properly designing the band structures of such luminescent devices to enhance their output power. In this review, we summarize the recent progress on various energy band designs and engineering of DUV LEDs, with particular of interest is paid on the various approaches in band engineering of the electron-blocking layer, quantum well, quantum barrier and the implementation of many novel structures such as tunnel junctions, ultrathin quantum heterostructures to enhance their efficiency. Those inspirational approaches pave the way towards the next generation of greener and efficient UV sources for practical applications.
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Citations
AlGaN-based deep ultraviolet micro-LED emitting at 275 nm.
Huabin Yu,Muhammad Hunain Memon,Danhao Wang,Zhongjie Ren,Haochen Zhang,Chen Huang,Meng Tian,Haiding Sun,Shibing Long +8 more
TL;DR: In this article, the electrical and optical properties of micro-scale AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) emitting at ∼275nm were carried out, with an emphasis on fabricated devices having a diameter of 300, 200, 100, 50, and 20 µm, respectively.
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Compositionally Graded III-Nitride Alloys: Building Blocks for Efficient Ultraviolet Optoelectronics and Power Electronics.
Haochen Zhang,Chen Huang,Kang Song,Huabin Yu,Chong Xing,Danhao Wang,Zhongling Liu,Haiding Sun +7 more
TL;DR: In this paper, the authors focus on the unique physical properties of graded aluminum gallium nitride (AlGaN) alloys and highlight the key roles that such graded structures play in device exploration.
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Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
TL;DR: In this paper, the authors review the recent progress in the development of UV optoelectronics based on AlGaN-SiC platform, mainly focusing on: (1) the growth strategies and material characterizations of alGaN epilayers on SiC; (2) the fabrication and performance evaluation of UV Optoelectronic devices built on the platform, including UV LEDs/lasers and UV photodetectors.
117
Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall
Meng Tian,Huabin Yu,Muhammad Hunain Memon,Zhanyong Xing,Chen Huang,Hongfeng Jia,Haochen Zhang,Danhao Wang,Shi Fang,Haiding Sun +9 more
TL;DR: In this paper, the authors performed a comprehensive investigation on the optical characterization of micro-sized DUV LEDs (micro-LEDs) emitting below 280 nm, highlighting the light extraction behavior in relation to the chip sidewall angle.
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Suppressing the efficiency droop in AlGaN-based UVB LEDs.
TL;DR: In this paper, the performance of AlGaN-based UVB LEDs for the suppression of efficiency droop as well as for the enhancement of hole injection in the multiquantum wells (MQWs) was numerically investigated.
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References
Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer
TL;DR: In this article, the numerical investigation of electron blocking layers (EBL) structures with different Al concentration gradient changing in AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs).
53
Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure
Huabin Yu,Qian Chen,Zhongjie Ren,Meng Tian,Shibing Long,Jiangnan Dai,Changqing Chen,Haiding Sun +7 more
TL;DR: In this paper, a novel DUV LED structure embedded with graded QWs was proposed, in which the Al composition was linearly changed to screen the Quantum confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) grown on c-plane substrates.
Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures
TL;DR: In this article, the authors theoretically investigated the improvement in internal quantum efficiency and total resistances in DUV-LEDs with an emission wavelength of 265 nm by a well-designed p-electrode geometry to produce uniform current spreading.
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III-Nitride Deep UV LED Without Electron Blocking Layer
Zhongjie Ren,Yi Lu,Hsin-Hung Yao,Haiding Sun,Che-Hao Liao,Jiangnan Dai,Changqing Chen,Jae-Hyun Ryou,Jianchang Yan,Junxi Wang,Jinmin Li,Xiaohang Li +11 more
TL;DR: In this paper, the authors showed that electron overflow can be significantly impacted by the slope variation of the quantum barrier conduction and valence bands, which in turn influence radiative recombination and optical output power.
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
Yuewei Zhang,Sriram Krishnamoorthy,Fatih Akyol,Jared M. Johnson,Andrew A. Allerman,Michael W. Moseley,Andrew M. Armstrong,Jinwoo Hwang,Siddharth Rajan +8 more
TL;DR: In this article, the authors investigated the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide bandgap AlGaN, and they showed that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN.
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