Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
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TL;DR: In this article, the authors proposed two couples composed of monolayer transition metal dichalcogenides (TMDs) with sizable band gaps for low-power TFET applications.
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Abstract: Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in building p-n junctions (couples) for TFET applications. Band alignment information is essential for realizing broken gap junctions with excellent electron tunneling efficiencies. Promising couples composed of monolayer TMDs are suggested to be VIB-MeX2 (Me = W, Mo; X = Te, Se) as the n-type source and IVB-MeX2 (Me = Zr, Hf; X = S, Se) as the p-type drain by density functional theory calculations.
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Citations
Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures
Xiaoping Hong,Jonghwan Kim,Su-Fei Shi,Yu Zhang,Chenhao Jin,Yinghui Sun,Sefaattin Tongay,Junqiao Wu,Yanfeng Zhang,Feng Wang +9 more
TL;DR: It is shown that hole transfer from the MoS2 layer to the WS2 layer takes place within 50 fs after optical excitation, a remarkable rate for van der Waals coupled two-dimensional layers, which can enable novel two- dimensional devices for optoelectronics and light harvesting.
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Hui Fang,Corsin Battaglia,Carlo Carraro,Slavomír Nemšák,Burak Ozdol,Burak Ozdol,Jeong Seuk Kang,Hans A. Bechtel,Sujay B. Desai,Florian Kronast,Ahmet Unal,G. Conti,C. Conlon,Gunnar K. Pálsson,Michael C. Martin,Andrew M. Minor,Andrew M. Minor,Charles S. Fadley,Eli Yablonovitch,Roya Maboudian,Ali Javey +20 more
TL;DR: Artificial semiconductor heterostructures built from single-layer WSe2 and MoS2 observe a large Stokes-like shift of ∼100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment having spatially direct absorption but spatially indirect emission.
Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures
Evgeny M. Alexeev,David A. Ruiz-Tijerina,David A. Ruiz-Tijerina,Mark Danovich,Matthew J. Hamer,Daniel J. Terry,Pramoda K. Nayak,Pramoda K. Nayak,Seongjoon Ahn,Sangyeon Pak,Juwon Lee,Jung Inn Sohn,Jung Inn Sohn,Maciej R. Molas,Maciej R. Molas,Maciej Koperski,Kenji Watanabe,Takashi Taniguchi,Kostya S. Novoselov,Roman V. Gorbachev,Roman V. Gorbachev,Hyeon Suk Shin,Vladimir I. Fal'ko,Vladimir I. Fal'ko,Alexander I. Tartakovskii +24 more
TL;DR: It is demonstrated that excitonic bands in MoSe2/WS2 heterostructures can hybridize, resulting in a resonant enhancement of moiré superlattice effects, which underpin strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructure.
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces
TL;DR: The mechanism of the Fermi level pinning at metal-MoS2 contact is shown to be unique for metal-2D-semiconductor interfaces, remarkably different from the well-known Bardeen pinning effect, metal-induced gap states, and defect/disorder induced gapStates, which are applicable to traditional metal- semiconductor junctions.
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High-Performance Chemical Sensing Using Schottky-Contacted Chemical Vapor Deposition Grown Monolayer MoS2 Transistors
TL;DR: The first use of Schottky-contacted chemical vapor deposition grown monolayer MoS2 as high-performance room temperature chemical sensors showing clear detection of NO2 and NH3 down to 20 ppb and 1 ppm, respectively is reported.
699
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