Patent
Back diffusion suppression structures
Alexander Lidow,Robert Beach,Guang Y. Zhao,Jianjun Cao +3 more
- 07 Apr 2010
45
TL;DR: An enhancement-mode GaN transistor as mentioned in this paper has a substrate, transition layers, a buffer layer, a barrier layer, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and buffer layer.
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Abstract: An enhancement-mode GaN transistor, the transistor having a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and the buffer layer.
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Citations
Patent
Compound semiconductor device and manufacturing method of the same
Toshihide Kikkawa
- 29 Sep 2009
TL;DR: In this paper, an n-GaN layer (compound semiconductor layer) formed over an electron transit layer (ETL) and a source electrode, a drain electrode, and a gate electrode are provided.
133
Patent
Semiconductor device and method of manufacturing the same
Yuji Ando,Ota Kazuki +1 more
- 06 Nov 2013
TL;DR: In this article, a high electron mobility transistor with a spacer layer whose band gap is larger than the band gap of the electron supply layer is provided, and a high potential barrier (electron barrier) is formed in the vicinity of an interface between the channel and the supply layer.
68
Patent
High electron mobility transistor and method of forming the same
Chen-Hao Chiang,Po-Chun Liu,Han-Chin Chiu,Chi-Ming Chen,Chung-Yi Yu +4 more
- 09 Jul 2012
TL;DR: In this article, a gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature, and a diffusion barrier layer is disposed on top of the second third-v compound layer.
60
Patent
Nitride semiconductor device and manufacturing method thereof
Young Hwan Park,Woo Chul Jeon,Ki Yeol Park,Seok Yoon Hong +3 more
- 23 Mar 2012
TL;DR: In this paper, the authors present a manufacturing method for a 2DEG-coated nitride semiconductor device with a two-dimensional electron gas (2DEG) channel inside.
57
Patent
E-Mode High Electron Mobility Transistors And Methods Of Manufacturing The Same
In-jun Hwang,Ki-Ha Hong,Jongseob Kim,Jae-kwang Shin,Jae-joon Oh,Jong-Bong Ha,Hyuk-soon Choi +6 more
- 11 Jul 2011
TL;DR: In this article, an E-mode high electron mobility transistor (HEMT) with a 2Dimensional Electron Gas (2DEG) barrier and a gate electrode is described.
44
References
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
1K
Patent
Group-iii nitride based high electron mobility transistor (hemt) with barrier/spacer layer
I. P. Smorchkova,Wladek Walukiewicz,P. Chavarkar,Yifeng Wu,Stacia Keller,Umesh K. Mishra +5 more
- 11 Apr 2002
TL;DR: In this paper, a group III nitride based high electron mobility transistor (HEMT) is proposed that provides improved high frequency performance, which includes a GaN buffer layer with an AlyGa1-yN (y=1 or y 1) layer on the Gan buffer layer.
311
Patent
Field effect transistor and method for fabricating the same
Masahiro Hikita,Tetsuzo Ueda,Manabu Yanagihara,Yasuhiro Uemoto,Tsuyoshi Tanaka +4 more
- 09 Dec 2005
TL;DR: In this article, an AlN buffer layer, an undoped GaN layer, undoped AlGaN layer and a heavily doped p-type GaN layers are formed in this order.
168
Patent
Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
Adam William Saxler
- 28 Sep 2004
TL;DR: In this paper, a nitride-based field effect transistor includes a substrate, a channel layer comprising InAlGaN formed on the substrate, source and drain ohmic contacts in electrical communication with the channel layer, and a gate contact formed in the channel.
124
Patent
Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same
Adam William Saxler,Scott T. Sheppard,Richard Peter Smith +2 more
- 31 Aug 2005
TL;DR: In this paper, a non-uniform aluminum concentration AlGaN-based cap layer has been provided for wide bandgap semiconductor devices and Graphitic BN passivation structures have been provided.
117
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