Journal Article10.1557/PROC-421-299
Atomic Force Microscope Chemically Induced Direct Processing
TL;DR: In this article, the effects of different drawing parameters such as tip bias, translation speed, ambient atmosphere, and substrate doping on line quality were explored, as well as the effect of tip bias and translation speed on the line quality.
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Abstract: Interest in room-temperature operable quantum effect devices has created a need for simple and inexpensive nanofabrication techniques. By applying a bias to a conductive AFM tip, we have succeeded in fabricating narrow (~30 nm) oxide lines on a variety of metal and III-V semiconductor substrates. The effects of different drawing parameters such as tip bias, translation speed, ambient atmosphere, and substrate doping on line quality were explored.
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References
Pattern generation on semiconductor surfaces by a scanning tunneling microscope operating in air
TL;DR: In this article, the authors used scanning tunneling microscope (STM) based techniques for the generation of nanometer-scale patterns on passivated semiconductor surfaces, such as hydrogen and sulfur-passivated gallium arsenide (GaAs) surfaces.
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Nanofabrication Of Titanium Surface By Tip-Induced Anodization In Scanning Tunneling Microscopy
TL;DR: In this article, a titanium (Ti) surface was arbitrarily oxidized by a scanning tunneling microscope (STM) tip with the sample bias of more than +3 V and a dot or line pattern of oxide was fabricated on Ti with the spatial resolution of 70 nm.
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Fabrication of 0.1 μm metal oxide semiconductor field‐effect transistors with the atomic force microscope
TL;DR: Using the atomic force microscope (AFM), a metal oxide semiconductor field effect transistor (MOSFET) was fabricated on silicon with an effective channel length of 0.1 μm as mentioned in this paper.
Fabrication of nanometer‐scale side‐gated silicon field effect transistors with an atomic force microscope
TL;DR: In this article, the fabrication of nanometer-scale side-gated silicon field effect transistors using an atomic force microscope is reported. The probe tip was used to define nanometerscale source, gate, and drain patterns by the local anodic oxidation of a passivated silicon (100) surface.
Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
TL;DR: In this article, an ultrahigh vacuum scanning tunneling microscope was used to pattern the hydrogen terminated Si(100) 2×1 surface of a 3 nm pitch, achieving linewidths of 1 nm on a 3nm pitch.