Journal Article10.1063/1.345572
Assessment of interface state density in silicon metal‐oxide‐semiconductor transistors at room, liquid‐nitrogen, and liquid‐helium temperatures
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TL;DR: In this paper, the authors investigated the interface state density of silicon metal-oxide-semiconductor (MOS) transistors operated at room, liquidnitrogen, and liquidhelium temperatures using the conventional subthreshold slope technique.
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Abstract: The interface state density of silicon metal‐oxide‐semiconductor (MOS) transistors operated at room, liquid‐nitrogen, and liquid‐helium temperatures is investigated using the conventional subthreshold slope technique. The magnitude of the interface state density found of the order of 1013–1014/eV cm2 at liquid‐helium temperature, suggests that such states correspond to the localized states situated in the band tails below the mobility edge of the two‐dimensional subband. Moreover, the interface state densities found by the subthreshold slope have been confirmed using the dynamic transconductance technique.
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Citations
Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures
Rosario M. Incandela,Lin Song,Harald Homulle,Edoardo Charbon,Andrei Vladimirescu,Fabio Sebastiano +5 more
TL;DR: In this paper, a detailed understanding of the device physics at deep-cryogenic temperatures was developed based on a compact model based on MOS11 and PSP, and the accuracy and validity of the compact models were demonstrated by comparing time and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier, with the measurements at 4 K.
Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors
TL;DR: In this article, a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures was derived.
Cryogenic MOS Transistor Model
TL;DR: In this article, a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes was developed relying on the 1-D Poisson equation and the drift-diffusion transport mechanism.
Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
TL;DR: In this paper, the authors presented an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures.
162
Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance
Ronghua Wang,Paul Saunier,Xiu Xing,Chuanxin Lian,Xiang Gao,Shiping Guo,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Xing +9 more
TL;DR: In this paper, a 150-nm gate enhancement-mode InAlN/Aln/GaN high-electron-mobility transistors are demonstrated on SiC substrates using plasma-based gate-recess etch.
References
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E. H. Nicollian,A. Goetzberger +1 more
TL;DR: In this article, a realistic characterization of the Si-SiO 2 interface is developed, where a continuum of states is found across the band gap of the silicon, and the dominant contribution in the samples measured arises from a random distribution of surface charge.
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A reliable approach to charge-pumping measurements in MOS transistors
TL;DR: In this article, a new and accurate approach to charge-pumping measurements for the determination of the Si-SiO 2 interface state density directly on MOS transistors is presented.
Transport in the inversion layer of a MOS transistor: use of Kubo-Greenwood formalism
TL;DR: In this paper, a study of the electronic transport in MOS transistor inversion layers is presented, where the use of the Kubo-Greenwood formalism allows the possibility of explaining the global behaviour of the transport coefficients (conductivity, mobility, etc.) from the weak inversion regime (non-degenerate) to the strong inversion regimes (degenerates) over a wide range of temperature.
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