Anti-site-induced diverse diluted magnetism in LiMgPdSb-type CoMnTiSi alloy.
T.T. Lin,T.T. Lin,Xuefang Dai,Ruikang Guo,Zhenxiang Cheng,Liying Wang,Xiaotian Wang,Xiaotian Wang,Guodong Liu,Guodong Liu +9 more
TL;DR: The Mn-Ti anti-site disorder can induce the diluted magnetism in CoMnTiSi matrix and two novel characteristics: the diluted antiferromagnetic half-metallicity and the diluted zero-gap half- metallity are found in the different degree range of the Mn- Ti anti- site disorder.
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Abstract: The effect of three kinds of anti-site disorder to electronic structure and magnetic properties of the LiMgPdSb-type CoMnTiSi alloy are investigated. It was found the Mn-Ti anti-site disorder can induce the diluted magnetism in CoMnTiSi matrix. The magnetic structure has an oscillation between the ferromagnetic and antiferromagnetic states with the different degree of Mn-Ti anti-site disorder. Two novel characteristics: the diluted antiferromagnetic half-metallicity and the diluted zero-gap half-metallity are found in the different degree range of the Mn-Ti anti-site disorder. The Co-Mn and Co-Ti anti-site disorder have little effect on the magnetic properties. The width of energy gap and the intensity of DOS at the Fermi level can be adjusted by the degree of Co-Mn or Co-Ti anti-site disorder. The independent control to the carrier concentration and magnetization can be realized by introducing the different anti-site disorder.
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Structural, elastic, electronic, magnetic and thermoelectric properties of new quaternary Heusler compounds CoZrMnX (X=Al, Ga, Ge, In)
TL;DR: In this paper, the structural, elastic, electronic, magnetic and transport properties of new quaternary Heusler compounds CoZrMnX (X=Al, Ga, Ge, In).
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DFT investigations on mechanical stability, electronic structure and magnetism in Co2TaZ (Z = Al, Ga, In) heusler alloys
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Experimental and theoretical investigation on the possible half-metallic behaviour of equiatomic quaternary Heusler alloys: CoRuMnGe and CoRuVZ (Z = Al, Ga)
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Exotic magnetic behaviour and evidence of cluster glass and Griffiths like phase in Heusler alloys Fe 2-x Mn x CrAl (0 ≤ x ≤ 1)
TL;DR: Analysis of structural, magnetic and thermodynamic properties of a series of Heusler alloys Fe2-xMnxCrAl suggests that with increasing Mn concentration, the L21 structure of Fe2CrAl is destabilized and the DC magnetization results show a decrement in paramagnetic to ferromagnetic phase transition temperature (T C) with increase Mn concentration.
•Posted Content
Structural, elastic, electronic, magnetic and thermoelectric properties of new quaternary Heusler compounds CoZrMnX (X=Al, Ga, Ge, In)
TL;DR: In this article, the structural, elastic, electronic, magnetic and transport properties of new quaternary Heusler compounds CoZrMnX (X =Al, Ga, Ge, In).
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References
Improved tetrahedron method for Brillouin-zone integrations
TL;DR: In this article, the tetrahedron method was used for Brillouin-zone integrations and a translational grid of k points and tetrahedral elements was proposed to obtain results for insulators identical to those obtained with special-point methods with the same number of points.
6.8K
Making Nonmagnetic Semiconductors Ferromagnetic
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
4.9K
New Class of Materials: Half-Metallic Ferromagnets
TL;DR: The band structure of Mn-based Heusler alloys of the crystal structure (MgAgAs type) has been calculated with the augmented-spherical-wave method.
Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO
Parmanand Sharma,Parmanand Sharma,Amita Gupta,K. V. Rao,Frank J. Owens,Renu Sharma,Rajeev Ahuja,J. M. Osorio Guillen,Börje Johansson,Börje Johansson,G. A. Gehring +10 more
TL;DR: The first observations of ferromagnetism above room temperature for dilute (<4 at%) Mn-doped ZnO semiconductors are reported, promising new spintronic devices as well as magneto-optic components.
1.8K
Tunable Multifunctional Topological Insulators in Ternary Heusler Compounds
Stanislav Chadov,Xiao-Liang Qi,Xiao-Liang Qi,Jürgen Kübler,Gerhard H. Fecher,Claudia Felser,Shou-Cheng Zhang +6 more
TL;DR: In this article, it was shown that around fifty Heusler compounds show the band inversion similar to HgTe, and the topological state in these zero-gap semiconductors can be created by applying strain or by designing an appropriate quantum well structure.
730