Journal Article10.1021/ACSAMI.6B02513
Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides
Yongtao Li,Yan Wang,Le Huang,Xiaoting Wang,Xingyun Li,Hui-Xiong Deng,Zhongming Wei,Jingbo Li +7 more
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TL;DR: This study shows that carrier concentration regulated by the gate voltage plays a major role in the "anti-ambipolar" behavior, where the drain-source current can only pass through in specific range of gate voltage (Vg) and it will be restrained if the Vg goes beyond the range.
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Abstract: Two-dimensional (2D) materials and their related van der Waals heterostructures have attracted considerable interest for their fascinating new properties. There are still many challenges in realizing the potential of 2D semiconductors in practical (opto)electronics such as signal transmission and logic circuit, etc. Herein, we report the gate-tunable anti-ambipolar devices on the basis of few-layer transition metal dichalcogenides (TMDs) heterostructures to gain higher information storage density. Our study shows that carrier concentration regulated by the gate voltage plays a major role in the “anti-ambipolar” behavior, where the drain-source current can only pass through in specific range of gate voltage (Vg) and it will be restrained if the Vg goes beyond the range. Several improved strategies were theoretically discussed and experimentally adopted to obtain higher current on/off ratio for the anti-ambipolar devices, such as choosing suitable p-/n-pair, increasing carrier concentration by using thicker...
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Citations
Multifunctional In-Memory Logics Based on a Dual-Gate Antiambipolar Transistor toward Non-von Neumann Computing Architecture
Yoshitaka Shingaya,Takuya Iwasaki,Ryoma Hayakawa,Shu Nakaharai,Kenji Watanabe,Takashi Taniguchi,Junko Aimi,Yutaka Wakayama +7 more
TL;DR: In-memory logic circuits based on a dual-gate antiambipolar transistor enable electrically reconfigurable two-input logic circuits and multifunctional artificial synapses.
1
An Anti‐Ambipolar Cryo‐Phototransistor
Roshan Jesus Mathew,Kai‐Hsiang Cheng,Christy Roshini Paul Inbaraj,Raman Sankar,Xuan P. A. Gao,Yit-Tsong Chen +5 more
TL;DR: In this article , an electrostatically tunable p-SnS/n-MoSe2 cryo-phototransistor is presented with unique anti-ambipolar characteristics and cryogenic-enhanced optoelectronic performance.
1
Changes of phonon modes and electron transfer induced by interface interactions of Pd/MoS<sub>2</sub> heterostructures
Xinyi Chen,Liang Zhou,Yusong Wu,Yadi Cao,Wengui Jiang,Yingying Xu,Rongming Wang,Yinghui Sun +7 more
TL;DR: Pd/MoS2 heterostructures exhibit changes in phonon modes and electron transfer due to interface interactions, influencing their functional properties and catalytic behavior as a result of metal nanoparticle modification of 2D transition metal dichalcogenides.
Asymmetric two-dimensional ferroelectric transistor with anti- ambipolar transport characteristics
28 Apr 2023
TL;DR: In this article , an asymmetric 2D heterostructure integrating MoTe 2 , h-BN, and CuInP 2 S 6 was presented as a ferroelectric transistor, which exhibits an unusual property of anti-ambipolar transport characteristic under both positive and negative drain biases.
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