Journal Article10.1103/PHYSREVLETT.102.125501
An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires.
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TL;DR: An in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform the surrounding a-SiratioH matrix into crystalline Si NWs.
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Abstract: We report an in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform the surrounding a-SiratioH matrix into crystalline SiNWs. The SiNWs can be approximately mm long, with the smallest diameter down to approximately 22 nm. A high growth rate of >10(2) nm/s and rich evolution dynamics are revealed in a real-time in situ scanning electron microscopy observation. A qualitative growth model is proposed to account for the major features of this IPSLS SiNW growth mode.
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Citations
Engineering island-chain silicon nanowires via a droplet mediated Plateau-Rayleigh transformation
Zhaoguo Xue,Mingkun Xu,Yaolong Zhao,Jimmy Wang,Xiaofan Jiang,Linwei Yu,Linwei Yu,Junzhuan Wang,Jun Xu,Yi Shi,Kunji Chen,Pere Roca i Cabarrocas +11 more
TL;DR: A nanoscale locomotion of metal droplets is exploited to demonstrate a large and readily controllable morphology engineering of crystalline SiNWs, from straight ones into continuous or discrete island-chains, at temperature <350 °C.
Planar Growth, Integration, and Applications of Semiconducting Nanowires.
TL;DR: The unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.
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Initial nucleation and growth of in-plane solid-liquid-solid silicon nanowires catalyzed by indium
Linwei Yu,Pere Roca i Cabarrocas +1 more
TL;DR: In this paper, the initial nucleation and growth of in-plane solid-liquid-solid (IPSLS) silicon nanowires (SiNWs), catalyzed by indium (In) drops prepared in situ by a plasma superficial reduction of indium tin oxide in a plasmaenhanced chemical-vapor deposition system was investigated.
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Growth-in-place deployment of in-plane silicon nanowires
Linwei Yu,Wanghua Chen,Benedict O’Donnell,Gilles Patriarche,Sophie Bouchoule,Philippe Pareige,Régis Rogel,Anne-Claire Salaün,Laurent Pichon,Pere Roca i Cabarrocas +9 more
TL;DR: In this article, an all-in-situ approach to fabricate self-positioned/aligned silicon nanowires via an in-plane solid-liquid-solid growth mode was proposed.
Deterministic Line-Shape Programming of Silicon Nanowires for Extremely Stretchable Springs and Electronics
Zhaoguo Xue,Mei Sun,Taige Dong,Zhiqiang Tang,Yaolong Zhao,Junzhuan Wang,Xianlong Wei,Linwei Yu,Linwei Yu,Qing Chen,Jun Xu,Yi Shi,Kunji Chen,Pere Roca i Cabarrocas +13 more
TL;DR: A deterministic line-shape programming of in-plane SiNWs into extremely stretchable springs or arbitrary 2D patterns with the aid of indium droplets that absorb amorphous Si precursor thin film to produce ultralong c-Si NWs along programmed step edges is demonstrated.
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