Journal Article10.1002/JNM.2139
An improved linear modeling technique with sensitivity analysis for GaN HEMT
Danting Luo,Li Shen,Jianjun Gao +2 more
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TL;DR: In this article, an improved linear modeling technique for gallium nitride high electron mobility transistor small-signal equivalent circuit under different bias conditions is presented, which is a combination of the test structure and sensitivity analytical method.
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Abstract: Summary
An improved linear modeling technique for gallium nitride high electron mobility transistor small-signal equivalent circuit under different bias conditions is presented in this paper. The method is a combination of the test structure and sensitivity analytical method to improve the precision of the intrinsic elements in the small-signal model. The analytical expressions for the relative sensitivities with respect to deviations in the measured scattering (S) parameters are also given here. The derived relationships have universal validity, but they have been verified by the good agreement between the measured S-parameters and simulated ones over the frequency range up to 40 GHz. Copyright © 2016 John Wiley & Sons, Ltd.
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Citations
Statistical models for microwave GaN HEMTs
Yuehang Xu,Zhikai Chen,Ruimin Xu +2 more
- 20 Jul 2016
TL;DR: In this paper, the large signal statistical characterization of GaN HEMTs is modeled based on empirical equivalent circuit model and the results show that good accuracy has been achieved between measurement results and Monte Carlo simulation results.
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Sensitivity analysis and uncertainty estimation in small‐signal modeling for InP HBT (invited paper)
Ke‐Jing Cao,Ao Zhang,Jianjun Gao +2 more
Abstract: In this paper, a sensitivity analysis and uncertainty estimation of small‐signal model for InP HBT is presented. Analytical expressions for sensitivity are derived in terms of the measured S‐parameters based on the direct intrinsic parameters extraction. Furthermore, the uncertainties of the intrinsic parameters vs frequency are discussed to give more reliable extraction results. The optimal solutions of the parameters are obtained by utilizing sensitivity analysis. In the frequency range of 45 MHz‐40GHz, good fits between the measured and modeled S‐parameters are achieved for 5 × 5μm2 InP HBT.
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Performance projection of multi‐bias and nonlinear distortion for gallium arsenides nano‐pHEMT
Md. Abdul Alim,Sadia Sultana,Jannatul Naima,Fahmida Sharmin Jui,Sabrina Alam,Ali A. Rezazadeh +5 more
TL;DR: In this article , a two-tone approach has been presented as an empirical, analytical explanation for the nonlinearity of active devices like nano pHEMT based on gallium arsenide semiconductor material.
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Guest editorial for the special issue on linear and nonlinear modeling of GaN transistors and circuits
TL;DR: This Special Issue reviews the state-of-the-art and new trends in modeling of Gallium Nitride transistors, highlighting the potential of this disruptive technology in the development of future communication systems.
An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure
Qingyu Yuan,Jinze Tang,Xiaodong Luan,Xin Lin,Fan Chang,Jiali Cheng +5 more
TL;DR: An improved method for extracting small-signal model parameters for GaN HEMTs up to 110 GHz based on the short-test structure. The method extracts parasitic inductance, resistance, and capacitance based on the short-test structure and size scalable model.
References
A new small-signal modeling approach applied to GaN devices
Anwar Jarndal,Gunter Kompa +1 more
- 07 Nov 2005
TL;DR: In this article, a new method for extracting the parasitic elements of the GaN device is developed based on two steps, which are: 1) using cold S-parameter measurements, high-quality starting values for the extrinsic parameters that would place the extraction close to the global minimum of the objective function for the distributed equivalent circuit model are generated and 2) the optimal model parameter values are searched through optimization using the starting values already obtained.
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Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs
Giovanni Crupi,Dongping Xiao,Dominique Schreurs,Ernesto Limiti,Alina Caddemi,W. De Raedt,Marianne Germain +6 more
TL;DR: In this article, the authors focused on the determination and analysis of an accurate small-signal equivalent circuit for gallium-nitride high electron-mobility transistors under different bias conditions.
180
Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
TL;DR: In this paper, a direct technique for determining the small-signal equivalent circuit of a heterojunction bipolar transistor (HBT) is described, where the parasitic elements are largely determined from measurements of test structures.
165
Direct Extraction of the AlGaAs/GaAs Heterojunction Bipolar Transis tor Small- S ig nal Equivalent Circuit
D. Costa,William Liu,James S. Harris +2 more
- 01 Jan 1991
TL;DR: In this paper, a technique for determining the small-signal equivalent-circuit model of an AIGaAs/GaAs heterojunction bipolar transistor (HBT) is presented.
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A new small-signal modeling and extraction method in AlGaN/GaN HEMTs
TL;DR: In this paper, a 20-element small-signal equivalent circuit for GaN HEMTs is proposed and correspondingly, a direct extraction method is developed, where two parasitic distributed interelectrode extrinsic capacitances and two additional feedback intrinsic resistances are considered.
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