Journal Article10.1109/LED.2011.2114322
AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology
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TL;DR: In this paper, undoped AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with a Si-CMOS-compatible technology based on Ti/Al/W ohmic and Schottky contacts are reported.
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Abstract: This letter reports undoped AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with a Si-CMOS-compatible technology based on Ti/Al/W ohmic and Schottky contacts. The use of ohmic recess is key to reduce the contact resistance of this Au-free metallization below 0.5 Ω·mm. Comparison of HEMTs fabricated on the same wafer with and without ohmic recess shows that the recess provides a tenfold reduction in contact resistance, resulting in a fivefold lower forward voltage drop at IDS = 100 mA/mm. The reported Au-free AlGaN/GaN HEMT fabrication technology provides similar performance (i.e., contact resistance, leakage current, and breakdown voltage) than state-of-the-art Au-based AlGaN/GaN HEMTs and can be used in standard Si fabs without the risk of contamination.
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Citations
Ohmic contacts to Gallium Nitride materials
TL;DR: In this article, a comprehensive study of the mechanisms of Ohmic contact formation on GaN-based materials is presented, discussing the role of single metals composing the stack and the modification induced by the thermal annealing, either on the metal layers or at the interface with GaN.
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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
Fanming Zeng,Judy Xilin An,Guangnan Zhou,Wenmao Li,Hui Wang,Tianli Duan,Jiang Lingli,Hongyu Yu +7 more
TL;DR: In this paper, the authors review recent progress in AlGaN/GaN HEMTs, including the following sections: challenges in device fabrication and optimizations, and some promising device structures from simulation studies.
148
Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
Masaaki Kuzuhara,Hirokuni Tokuda +1 more
TL;DR: In this paper, the tradeoff relation between ON-resistance and breakdown voltage in AlGaN/GaN HEMTs exceeded the SiC limit and was getting close to the GaN limit, but the breakdown voltage achieved was still lower than the theoretical impact ionization limit.
119
Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics
Marleen Van Hove,Xuanwu Kang,Steve Stoffels,Dirk Wellekens,Nicolo Ronchi,Rafael Venegas,Karen Geens,Stefaan Decoutere +7 more
TL;DR: In this paper, a bilayer gate dielectric stack consisting of Si3N4 and Al2O3 was used for the same growth sequence as the rest of the epilayer stack and the Al 2O3 layer was deposited ex situ by atomic layer deposition.
65
References
The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT
Mazuina Mohamad,Farahiyah Mustafa,Mastura Shafinaz Zainal Abidin,Shaharin Fadzli Abd Rahman,Nihad K. Ali Al-Obaidi,Abdul Manaf Hashim,Azlan Abdul Aziz,Md. Roslan Hashim +7 more
- 28 Jun 2010
TL;DR: In this paper, the response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25°C to 200°C has been investigated.
11
The Sensing Performance of Hydrogen Gas Sensor Utilizing Undoped-AlGaN/GaN HEMT
Mazuina Mohamad,Farahiyah Mustafa,Shaharin Fadzli Abd,Mastura Shafinaz Zainal Abi,Nihad K. Ali Al-Oba,Abdul Manaf Hash,Azlan Abdul Aziz,Md. Roslan Hashim +7 more
TL;DR: In this article, the response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25°C to 200°C has been investigated.
10
Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors
TL;DR: In this paper, a mechanism of the formation of the bulges on the surface of Ti/Al/Ni/Au Ohmic contact in AlGaN/GaN high electron mobility transistors is proposed.
Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
Marcel Placidi,Amador Pérez-Tomás,A. Constant,Gemma Rius,Narcis Mestres,José Millan,Philippe Godignon +6 more
TL;DR: In this paper, the effect of a protection cap during post-implantation annealing is investigated, and how it affects the specific contact resistivity ( ρ c ) of Si-implanted GaN.