Proceedings Article10.1109/EUMA.1974.332002
Active Microwave Semiconductor Devices
Hartwig W. Thim
- 01 Oct 1974
- pp 1-15
7
TL;DR: In this paper, the authors present a survey of active microwave semiconductor devices with emphasis on devices made from Gallium Arsenide which is presently the material with the greatest scope and promise.
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Abstract: This paper presents a survey of active microwave semiconductor devices with emphasis on devices made from Gallium Arsenide which is presently the material with the greatest scope and promise. Thanks to the three properties of high mobility, low threshold field and the existence of semi-insulating substrate GaAs is now preferably used as the starting material for avalanche (IMPATT) diodes, transferred electron (Gunn) diodes and field effect transistors. The GaAs IMPATT diode is presently the hottest performer in the frequency range up to X-band, whereas at higher frequencies the double-drift Si IMPATT diode still has the honor of maximum power and efficiency. Although exhibiting lower power and efficiency the Gunn diode has certain advantages such as low noise, low bias voltage, needs less critical tuning and bias circuitry and has a simpler structure. During recent years the GaAs field effect transistor has been developed to the fastest three terminal semiconductor device with outstanding noise performance. The paper outlines the basic device physics, terminal characteristics and reports the newest results.
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Citations
Microwave semiconductor materials and diodes
Clive Poole,Izzat Darwazeh +1 more
- 01 Jan 2015
TL;DR: The reader familiar with low-frequency active devices, fabricated in silicon (Si) or germanium (Ge) material, will be struck by the much wider range of semiconductor materials and exotic semiconductor devices that are encountered at RF and microwave frequencies as mentioned in this paper.
13
α-SiC nanoscale transit-time diodes: performance of the photo-irradiated terahertz sources at elevated temperature
TL;DR: In this paper, the effects of elevated junction temperature on the terahertz (THz) frequency characteristics of α-(hexagonal, 4H and 6H) silicon carbide (SiC) based double-drift region (DDR, p++ p n n++ type) impact ionization avalanche transit-time (IMPATT) devices are studied and compared for the first time through simulation experiments.
11
Experimental and Theoretical Studies of Avalanche Transistors
John Carroll,A.M. Winstanley,P.J. Horsburgh +2 more
- 01 Oct 1975
TL;DR: In this article, a three terminal avalanche device is considered operating in a Trapatt type of circuit, and a simplified theory is presented which suggests that good efficiencies over 30% can be obtained with bandwidths in excess of 50% and power gains around 10 dB.
4
A broad-band negative conductance GaAs TED
Palle Jeppesen,B. Jeppsson,P. Jondrup +2 more
- 01 Sep 1975
TL;DR: In this paper, small-signal negative conductances from 5 to 17 GHz in both voltage polarities are reported for CW-operated 10-µm supercritically doped n+nn+GaAs transferred electron devices.
4
A Detailed Computer Analysis of SiC And GaN Based IMPATT Diodes Operating at Ka, V And W Band
D. Ghosh,B. Chakrabarti,Monojit Mitra +2 more
- 01 Jan 2012
TL;DR: In this article, a comprehensive study has been made on IMPATT diodes based on high band gap materials, GaN (Wz) and SiC (4H) operating at Ka, V and W-band respectively relative to fabrication.
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Microwave avalanche diodes
S.M. Sze,R.M. Ryder +1 more
- 01 Aug 1971
TL;DR: A brief review summarizes mechanisms of operation, power output, efficiency, noise, and some important features of design and fabrication of microwave avalanche diodes of various types.
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