Journal Article10.1109/16.55761
Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors
B.A. Khan,R. Pandya +1 more
73
TL;DR: In this paper, the activation energy of polysilicon thin-film transistors (TFTs) and the effects of hydrogenation on this energy are discussed using different models of the density of states in the material.
read more
Abstract: The activation energy of the drain current in polysilicon thin-film transistors (TFTs) and the effects of hydrogenation on this energy are discussed. The activation energy data are fitted using different models of the density of states in the material. It is shown that a model which assumes a distribution of brand tail states and localized deep states can account for the activation energy data of unhydrogenated polysilicon TFTs. However, the activation energy data on hydrogenated TFTs cannot be explained with the band tail model. Instead, a simple model of deep states localized at the grain boundary can fit this data quite accurately. Also, it is shown that there is a characteristic kink in the activation energy data of the hydrogenated TFTs which is a signature of the location of the deep states relative to the valence band edge. Analysis indicates that these deep states are located approximately 0.36 eV from the valence band edge. This value is consistent with that obtained from absorption measurements using photothermal deflection spectroscopy. >
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Patent
Insulated gate field effect transistor and its manufacturing method
Shunpei Yamazaki
- 16 Oct 1997
TL;DR: In this article, an insulated gate field effect transistor is constructed by first forming a non-single crystalline semiconductor layer or island on an insulating surface of a substrate, and a gate insulating layer is then formed on the semiconductor layers.
165
Physical models for degradation effects in polysilicon thin-film transistors
M. Hack,A.G. Lewis,I.-W. Wu +2 more
TL;DR: In this article, experimental data showing the degradation in performance of polysilicon thin-film transistors (TFTs) under a variety of bias stress conditions are presented. And it is shown that stressing under transient conditions leads to a more severe performance degradation than stressing under comparable steady state conditions.
128
Polycrystalline silicon-germanium thin-film transistors
Tsu-Jae King,Krishna C. Saraswat +1 more
TL;DR: In this paper, the fabrication of p-and n-channel MOS thin-film transistors in polycrystalline silicon-germanium (poly-Si/sub 1-x/Ge/sub x/) films is described, and their electrical characteristics are presented.
100
Effects of NH/sub 3/ plasma passivation on N-channel polycrystalline silicon thin-film transistors
TL;DR: The NH/sub 3/plasma passivation has been performed on polycrystalline silicon (poly-Si) thin-film transistors (TFT's) in this article.
95
Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film Transistors
TL;DR: In this article, the authors present results of two-dimensional numerical simulations of both amorphous silicon and NMOS and PMOS polycrystalline silicon thin-film transistors.
90
References
Grain boundaries in semiconductors
TL;DR: In this article, a review of the available experimental and theoretical understanding on the structure and electronic properties of grain boundaries in semiconducting materials is presented, where high-resolution electron microscope images of interfaces are interpreted within the framework of the structural unit model of grain boundary, and the electronic properties are discussed with relation to the popular symmetric Schottky barrier model for charge trapping and potential barrier formation.
481
Density of gap states of silicon grain boundaries determined by optical absorption
TL;DR: In this paper, optical absorption measurements on fine-grain polycrystalline-silicon thin films indicate that the singly occupied dangling silicon bond lies 0.65±0.15 eV below the conduction band minimum in the grain boundary.
231
Polycrystalline-silicon device technology for large-area electronics
TL;DR: In this article, a near-optimal fabrication of polycrystalline-silicon thin-film devices with hole mobilities of up to 50 cm2/V. s and electron mobilities up to 70 cm 2/V. s was demonstrated.
110
Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system—Part I: Small signal theory
TL;DR: In this paper, a theory of conduction in polycrystalline silicon is presented, which regards the grain boundary as amorphous semiconductor in equilibrium contact with crystalline grain.
93