Proceedings Article10.1109/APEC.2018.8341385
A three-level, T-type, power electronics building block using Si-SiC hybrid switch for high-speed drives
Amol Deshpande,Yingzhuo Chen,Balaji Narayanasamy,Arvind S Sathyanarayanan,Fang Luo +4 more
- 04 Mar 2018
- pp 2609-2616
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TL;DR: In this article, the authors presented the design and implementation of a 100 kW three-level T-type (3L-T2), single-phase power electronics building block (PEBB).
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Abstract: This paper presents the design and implementation of a 100 kW three-level T-type (3L-T2), single-phase power electronics building block (PEBB). The PEBB features switching power devices with associated gate drivers, DC-link capacitors and interconnection busbar. A hybrid switch (HyS), which includes a Si IGBT and a SiC MOSFET in parallel, forms the switching power device in the PEBB. An low-inductive multi-layer laminated busbar was designed to have symmetrical current commutation loops. A major contribution is that this is achieved while no three-level T-type power module was used. A loop inductance of 29 nH was achieved which is lower than the existing state-of-the-art three-level designs in literature. The fabricated prototype PEBB achieves a specific power density of 27.7 kW/kg and a volumetric power density of 308.61 W/in3. Single-phase operation of the PEBB has been demonstrated at the switching frequency of 28 kHz.
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Citations
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Design and Validation of A 250-kW All-Silicon Carbide High-Density Three-Level T-Type Inverter
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A 10-Level Flying Capacitor Multi-Level Dual-Interleaved Power Module for Scalable and Power-Dense Electric Drives
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Review of Si IGBT and SiC MOSFET Based on Hybrid Switch
Puqi Ning,Tianshu Yuan,Yuhui Kang,Cao Han,Lei Li +4 more
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TL;DR: In this article, the state-of-the-art SiC hybrid switch (HyS) combines low conduction loss of IGBT and low switching loss of SiC MOSFET, and the cost is closer to that of Si IGBT.
Methodology of Low Inductance Busbar Design for Three-Level Converters
Handong Gui,Ruirui Chen,Zheyu Zhang,Jiahao Niu,Leon M. Tolbert,Fei Wang,Daniel Costinett,Benjamin J. Blalock,Benjamin B. Choi +8 more
TL;DR: The methodology of busbar layout design for 3L converters based on the magnetic cancellation effect is presented and can fit for 3 L converters with symmetric and asymmetric configurations.
31
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