A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications
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TL;DR: Numerical simulations are conducted to validate the proposed new concise yet accurate switching loss model for SiC power MOSFETs and provide guidelines in designing the gate driver for ultrafast SiCPower MOSfETs.
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Abstract: The reduced chip size and unipolar current conduction mechanism make silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) suitable for high-frequency power electronics applications. Modeling the switching process of the SiC power MOSFET with parasitic components is important for achieving higher efficiency and power density system design. Therefore, this paper proposes a new concise yet accurate switching loss model for SiC power MOSFETs. Addressing the limitations in experimental measurements, numerical simulations are conducted to validate the proposed model taking the output capacitance C oss discharge and charge into consideration. The role of the parasitic components in the second-order model is discussed in depth for switching losses. Furthermore, this paper also provides guidelines in designing the gate driver for ultrafast SiC power MOSFETs.
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Citations
Extreme high efficiency enabled by silicon carbide (SiC) power devices
Alex Q. Huang
TL;DR: Silicon Carbide (SiC) power devices enable efficient renewable energy generation, conversion, and delivery, surpassing silicon IGBT technology with remarkable power conversion efficiency in high-power applications, and poised to replace traditional transformers with solid-state alternatives.
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Origins of Soft-Switching C oss Losses in SiC Power MOSFETs and Diodes for Resonant Converter Applications
TL;DR: In this article, the authors investigated the origin of the large-signal chargevoltage hysteresis in soft-switching power converters, which is the equivalent to OFF-state energy loss.
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A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode
TL;DR: In this paper, a SiC asymmetric cell trench MOSFET with split gate (SG) and integrated junction barrier schottky (JBS) diode (SGS-ATMOS) is proposed.
A high-accuracy switching loss model of SiC MOSFETs in a motor drive for electric vehicles
TL;DR: In this article, the voltage and current trajectories of SiC MOSFETs in the switching transition of a motor drive system were analyzed in detail based on the analysis, the conduction and switching losses of the SiC metal-oxidesemiconductor field effect transistors in the motor drive inverter are modeled Compared with the traditional power loss models, the proposed analysis model includes parasitic inductances and capacitances in circuitry and the MOSFL, and the reverse recovery loss of the body diode, etc.
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IEEE ITRW Working Group Position Paper-System Integration and Application: Silicon Carbide: A Roadmap for Silicon Carbide Adoption in Power Conversion Applications
TL;DR: A migration from silicon (Si) to silicon carbide (SiC) power electronics is driven by the need for those power converters to have much greater power density, reliability, and overall system performance without costly devices or designs.
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