A Review of mm-Wave Power Amplifiers for Next-Generation 5G Communication

TL;DR: This study reviewed all device technologies (especially IV and III-V semiconductor technologies) for power amplifiers and found that a gallium nitride (GaN)-based PA is the best candidate to provide high output power, high efficiency, and high back-off power for 5G base station.

Abstract: In this paper, a review study of millimeter wave-based power amplifiers for 5G communication is presented. This literature mainly focuses on major component of the RF transceiver IC, i.e., power amplifier (PA). The upcoming 5G communication envisioned broadband modulation, high speed data rate, and new integration technologies which could overcome key challenges in the design of mobile devices and communication buildings. The power amplifiers in the 5G base station require high output powers (ranging from 2 to 10 W), high efficiency (up to 95%), and high gain (up to 40 dB). The basic building blocks, device technologies, architecture of RF power amplifiers, and parametric performances will be considered in this review. This study reviewed all device technologies (especially IV and III-V semiconductor technologies) for power amplifiers and found that a gallium nitride (GaN)-based PA is the best candidate to provide high output power, high efficiency, and high back-off power. In addition, various architectures of PAs have been reported while doherty power amplifier is one of best candidate for 5G base station.