Journal Article10.1016/J.SSE.2003.12.030
A process/physics-based compact model for nonclassical CMOS device and circuit design
Jerry G. Fossum,L. Ge,Meng-Hsueh Chiang,V.P. Trivedi,M.M. Chowdhury,Leo Mathew,G. O. Workman,Bich-Yen Nguyen +7 more
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TL;DR: In this article, a process/physics-based compact model (UFDG) for nonclassical MOSFETs having ultra-thin Si bodies (UTB) is overviewed.
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Abstract: A process/physics-based compact model (UFDG) for nonclassical MOSFETs having ultra-thin Si bodies (UTB) is overviewed. The model, in essence, is a compact Poisson–Schrodinger solver, including accountings for short-channel effects, and is applicable to nanoscale fully depleted (FD) SOI MOSFETs as well as generic double-gate (DG) devices. The utility of UFDG in nonclassical CMOS device design, as well as circuit design, is stressed, and demonstrated by using it in Spice3 to design UTB MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances. Also, calibration of UFDG to fabricated FinFETs yields new physical insights about these potentially viable nanoscale DG devices, and about model requirements for them.
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Citations
Nanoscale FinFETs with gate-source/drain underlap
TL;DR: In this article, the authors show that gate-source/drain (G-S/D) underlap can be achieved via large, doable straggle in the S-D fin-extension doping profile.
284
FinFETs: From Devices to Architectures
D. Bhattacharya,Niraj K. Jha +1 more
TL;DR: Research on FinFETs from the bottommost device level to the topmost architecture level is reviewed and various possible FinFet asymmetries and their impact are surveyed, and novel logic-level and architecture-level tradeoffs offered by FinFetts are surveyed.
Quantum-mechanical effects in trigate SOI MOSFETs
TL;DR: In this article, a self-consistent Poisson-Schro/spl uml/dinger solver is used to calculate the current in trigate n-channel silicon-on-insulator transistors with sections down to 2 nm /spl times/ 2 nm.
130
BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control
Sourabh Khandelwal,Yogesh Singh Chauhan,Darsen D. Lu,Sriramkumar Venugopalan,M. A. Karim,Angada B. Sachid,Bich-Yen Nguyen,O. Rozeau,O. Faynot,Ali M. Niknejad,C. Hu +10 more
TL;DR: In this article, the authors present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control.
113
CMOS Vertical Multiple Independent Gate Field Effect Transistor (MIGFET)
Leo Mathew,Yang Du,Aaron Thean,Michael A. Sadd,A. Vandooren,Colita Parker,Tab A. Stephens,Rode R. Mora,R. Rai,M. Zavala,D. Sing,S. Kalpat,J. Hughes,Rob Shimer,S. Jallepalli,G.O. Workman,W. Zhang,Jerry G. Fossum,Bruce E. White,Bich-Yen Nguyen,J. Mogab +20 more
- 04 Oct 2004
TL;DR: In this article, perfectly self aligned vertical multiple independent gate field effect transistor (MIGFET) CMOS devices have been fabricated for mixed-signal applications and used as signal mixer.
111
References
Technological innovation in the semiconductor industry: A case study of the International Technology Roadmap for Semiconductors (ITRS)
R. Schaller
- 29 Jul 2001
TL;DR: The Semiconductor Industry Association's (SIA) Technology Roadmap for Semiconductors (ITRS) as discussed by the authors is one of the most widely used technology roadmaps.
602
Sub 50-nm FinFET: PMOS
Xuejue Huang,Wen-Chin Lee,C. Kuo,D. Hisamoto,Leland Chang,J. Kedzierski,E. Anderson,Hideki Takeuchi,Yang-Kyu Choi,K. Asano,Vivek Subramanian,Tsu-Jae King,Jeffrey Bokor,Chenming Hu +13 more
- 01 Dec 1999
TL;DR: In this article, a self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short channel effect, and a 45 nm gate-length PMOS FinEET is presented.
583
Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs
Lixin Ge,Jerry G. Fossum +1 more
TL;DR: In this article, a compact physics-based quantum effects model for symmetrical double-gate (DG) MOSFETs of arbitrary Si-film thickness is developed and demonstrated.
250
Physical insights on design and modeling of nanoscale FinFETs
Jerry G. Fossum,M.M. Chowdhury,V.P. Trivedi,T.-J. King,Yang-Kyu Choi,J. An,B. Yu +6 more
- 08 Dec 2003
TL;DR: In this paper, an array of measured device data, a numerical device simulator, and a process/physics-based compact model are used to gain new and important physical insights on nanoscale FinFETs with undoped thin-fin bodies.
Moderate inversion in MOS devices
TL;DR: In this article, the limits of validity of common approximations for weak and strong inversion are examined, and it is shown that at the lower limit of what is often defined as strong-inversion region, incremental quantities such as transconductance can be an order-of-order smaller than the value predicted by using common strong inversions.
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