Journal Article10.1016/0029-554X(80)90440-1
A Monte Carlo computer program for the transport of energetic ions in amorphous targets
J.P. Biersack,L.G. Haggmark +1 more
4.6K
TL;DR: In this article, a Monte Carlo computer program was developed for determining ion range and damage distributions as well as angular and energy distributions of backscattered and transmitted ions in amorphous targets.
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About: This article is published in Nuclear Instruments and Methods. The article was published on 01 Aug 1980. The article focuses on the topics: Dynamic Monte Carlo method & Monte Carlo method.
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Citations
A systematic analysis of defects in ion-implanted silicon
TL;DR: In this paper, a classification scheme for implant-related damage which arise upon annealing consisting of five categories is presented, and the most common forms of this damage are microtwins, hairpin dislocations and segregation related defects.
521
Primary radiation damage: A review of current understanding and models
Kai Nordlund,Steven J. Zinkle,Steven J. Zinkle,A. E. Sand,F. Granberg,Robert S Averback,R. E. Stoller,Tomoaki Suzudo,Lorenzo Malerba,Florian Banhart,William J. Weber,William J. Weber,Francois Willaime,Sergei L. Dudarev,David Simeone +14 more
TL;DR: In this article, the authors consider the extensive experimental and computer simulation studies that have been performed over the past several decades on what the nature of the primary damage is, and provide alternatives to the current international standard for quantifying this energetic particle damage, the Norgett-Robinson-Torrens displacements per atom (NRT-dpa) model for metals.
506
Transient thermal processes in heavy ion irradiation of crystalline inorganic insulators
TL;DR: In this paper, a review of matter transformation induced in crystalline inorganic insulators by swift heavy ions is presented, with the emphasis on new results obtained for amorphizable materials such as Gd3Ga5O12, GeS, and LiNbO3 and for nonamorphizable crystals such as SnO2, LiF and CaF2.
482
Molecular dynamics simulation of ion ranges in the 1–100 keV energy range
TL;DR: In this article, an efficient molecular dynamics method for calculating ion ranges and deposited energies in the recoil energy region 100 eV to 100 keV was presented, taking into account only the interactions that are involved in the slowing-down process.
476
Recent developments in micromilling using focused ion beam technology
TL;DR: The application of focused ion beam (FIB) technology in microfabrication has become increasingly popular as discussed by the authors, and this can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it.
458
References
Theorie der Streuung schneller geladener Teilchen I. Einzelstreuung am abgeschirmten Coulomb-Feld
TL;DR: The quantenmechanische Theorie der elastischen Einzelstreuung am abgeschirmten Coulomb - Feld wird unter Berücksichtigung der Abschirmung nach the Thomas - Fermi - Methode in analytischer form entwickelt as discussed by the authors.
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Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation
Mark T. Robinson,Ian M. Torrens +1 more
TL;DR: In this paper, a comprehensive computer program has been developed for the simulation of atomic-displacement cascades in a variety of crystalline solids, using the binary-collision approximation to contruct the projectile trajectories.
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A proposed method of calculating displacement dose rates
TL;DR: In this paper, a simple procedure is proposed for calculating the number of atomic displacements produced in a damage cascade by a primary knock-on atom of known energy, which is in close accord with recent computer simulations of radiation damage phenomena.
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ENERGY DISSIPATION BY IONS IN THE kev REGION
J. Lindhard,M. Scharff +1 more
TL;DR: In this paper, the authors derived theoretical approximations to scattering cross sections, ranges and straggling for power potentials, showing that the scattering is peaked in the forward direction rather than isotropic.
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Ion Implantation in Semiconductors
James W. Mayer,József Gyulai +1 more
- 01 Jan 1983
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
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