Journal Article10.1038/NATURE02310
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
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TL;DR: An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.
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Abstract: Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.
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Citations
Recent progresses of silicon-based optoelectronic devices for application in fiber communication
Jinzhong Yu
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TL;DR: Si-based optoelectronic devices, including stimulated emission from Si diode, 1.3 and 1.5 /spl mu/m SiGe photodetector with quantum structures, 1 GHz MOS optical modulator, SOI optical switch matrix and wavelength tunable filter are reviewed in this paper.
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Organic electro-optic glasses for WDM applications
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TL;DR: In this paper, the authors discuss the use of organic electro-optic (OEO) materials for the fabrication of active wavelength division multiplexing (WDM) transmitter/receiver systems and reconfigurable optical add/drop multiplexers (ROADMs).
Optical design of bent rib waveguide with MOS cross-section
TL;DR: In this article, a single-mode bent MOS-cross-section rib waveguide design with 0.9 dB/cm bending loss at 25 μm bending radius was provided, where the peak position for the TE-like mode was tuned to the gate oxide around which the maximum amount of free carriers were accumulated to optimize the free carrier dispersion effect.
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Influence of hole diameter on the average size and quantity distribution of Si nanoparticles
Lizhi Chu,Yu Zong,Zechao Deng,Xuecheng Ding,Hongdong Zhao,Yinglong Wang +5 more
- 21 Dec 2013
TL;DR: In this paper, a single crystalline target with high resistivity was ablated by a XeCl excimer laser (wavelength 308nm) in pure argon gas under the ambient pressure of 10 Pa.
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Silicon photonics: opportunity, applications & recent results
Richard Jones,Ling Liao,Haisheng Rong,Mario J. Paniccia +3 more
- 05 Dec 2005
TL;DR: In this article, the authors give an overview of research being done at Intel in the area of silicon photonics. Recent breakthroughs in high speed optical modulation and Raman amplification in SOI waveguides are discussed.
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A review of lithium niobate modulators for fiber-optic communications systems
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TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Silicon-based optoelectronics
Richard A. Soref
- 01 Dec 1993
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).
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All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm
Richard A. Soref,J. Larenzo +1 more
TL;DR: In this paper, an end-coupled planar and channel waveguides at 1.3 μm have been demonstrated in single-crystal Si layers grown epitaxially on heavily doped Si substrates, and an optical power divider consisting of intersecting channels was designed and fabricated.
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Numerical methods for semiconductor device simulation
TL;DR: This paper describes the numerical techniques used to solve the coupled system of nonlinear partial differential equations which model semiconductor devices, and the efficient solution of the resulting nonlinear and linear algebraic equations.
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