A high responsivity and controllable recovery ultraviolet detector based on a WO 3 gate AlGaN/GaN heterostructure with an integrated micro-heater

Question

1. What are the contributions mentioned in the paper "Delft university of technology a high responsivity and controllable recovery ultraviolet detector based on a wo3gate algan/gan heterostructure with an integrated micro-heater" ?

2. What is the effect of the UV illumination on the photodetector?

3. What is the effect of the WO3 gate on the photodetector?

4. What is the important factor in the performance of a photodetector?

Accepted Answer

Sun and Shuo Zhang this paper have reported several types of semiconductor detector structures, such as Schottky barrier photodiodes,6 metal- semiconductor-metal ( MSM ) type photodetectors,7 photoconductors, and pn junction type and p-i-n photododes8 for ultraviolet light detection.

Accepted Answer

After the UV illumination, the energy barrier delays the recombination of the photogenerated carriers, which results in a long recovery time (PPC effect).

Accepted Answer

When there is no bias applied between the source and drain of the detector in the dark, the oxygen molecules from the ambient air absorbed on the nanolayer WO3 combine with electrons and create a depletion sub-layer near the surface [O2(gas) + e - O2 (adsorb)], where O2 is the adsorbed oxygen ion on the WO3 surface, so that there is a depletion layer at theFig.

Accepted Answer

The performance of photodetectors is usually dependent on the semiconductor material used, such as traditional wide-bandgap semiconductors, III-nitride semiconductors, and metallic oxides.

Accepted Answer

A 5 mmthick SiO2 layer on the backside of the wafer as a hard mask during the DRIE process to etch the silicon substrate was deposited and patterned by ICP etching.

Accepted Answer

An integrated microheater around the 2DEG area of the AlGaN/GaN device enabled a mono-pulsed heating process at the chip scale without the need for external heating.

Accepted Answer

The transient response of a WO3 gate AlGaN/GaN heterostructure photodetector to 395 nm UV illumination and the PPC effect that can be removed by the MHR process: short heating reset at different illumination intensities (a) 200 mW cm 2 and (b) 520 mW cm 2; (c) drain current change versus light intensity; the transient response to 268 nm UV illumination: short heating reset at different illumination intensities (d) 0.79 mW cm 2 and (e) 20.3 mW cm 2; (f) drain current change and response time versus light intensity.

Accepted Answer

the persistent photoconductivity (PPC) effect can be eliminated by the novel method introduced here: monopulse heating reset (MHR) by applying a pulse voltage to the micro-heater after the removal of the UV illumination.

Accepted Answer

solar-blind photodetectors are specifically needed in applications like fire sensing, missile and rocket warning, non-line-of sight optical communication, ozone monitoring, and so on.

Accepted Answer

The transient response of a WO3 gate AlGaN/GaN heterostructure photodetector to 268 nm UV illumination and the removal of the PPC effect by the novel MHR methods: heating reset (inset).

Accepted Answer

The recovery time was reduced from hours to seconds without reducing the high responsivity and without affecting the stability of the photodetector.

Accepted Answer

the dark current first dropped rapidly to 205 mA due to the carrier scattering in the 2DEG channel by increasing the temperature of the WO3/AlGaN/GaNheterostructure photodetector, then came back to 560 mA after the MHR process and remained stable.

Accepted Answer

The epitaxial structure consisted of an undoped GaN buffer layer (2 mm), followed by an AlN interlayer (1 nm), an undopedAl0.26Ga0.74N barrier layer (25 nm), and a 3 nm GaN cap layer.

Accepted Answer

the negative potential on the WO3 nanolayer is reduced and the 2DEG concentration in the channel layer of the heterostructure is enhanced.

Accepted Answer

The results are shown in Fig. 3. The value at which the current stabilizes after the MHR process decreased with the temperature, which means that the suppression of the PPC effect can be effectively accelerated by increasing the operating temperature of the photodetector.

Accepted Answer

Another common approach to improve responsivity is to use the photoconductive type, which is easy to fabricate at lower cost and has a good commercial prospect.

Accepted Answer

the negative potential on the WO3 nanolayer is raised and the 2DEG concentration in the channel layer of the heterostructure is decreased.

A high responsivity and controllable recovery ultraviolet detector based on a WO 3 gate AlGaN/GaN heterostructure with an integrated micro-heater

Chat with Paper

AI Agents for this Paper

Most frequently asked questions

1. What are the contributions mentioned in the paper "Delft university of technology a high responsivity and controllable recovery ultraviolet detector based on a wo3gate algan/gan heterostructure with an integrated micro-heater" ?

2. What is the effect of the UV illumination on the photodetector?

3. What is the effect of the WO3 gate on the photodetector?

4. What is the important factor in the performance of a photodetector?

5. What was the process used to etch the silicon substrate?

6. What is the effect of the integrated microheater?

7. What is the effect of the MHR process on the photodetector?

8. How can the PPC effect be eliminated?

9. What are the applications of solar-blind photodetectors?

10. What is the effect of the MHR method on the WO3 gate?

11. How long did the recovery time be reduced?

12. How did the dark current drop to 205 mA?

13. What is the structure of the AlGaN/GaN epitaxial heterostructure?

14. What is the effect of the UV light on the WO3 nanolayer?

15. What is the effect of the MHR process?

16. What is the way to improve the responsivity of a photodetect?

17. What is the effect of the MHR process on the WO3 nanolayer?

Figures

Citations

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Engineering GaN/AuNC core–shell nanowire heterojunctions by gold nanoclusters with excitation-dependent behavior for enhancing the responsivity and stability of self-driven photodetectors

Microheater with copper nanofiber network via electrospinning and electroless deposition

Enhance the responsivity of self-driven ultraviolet photodetector by (Al,Ga)N nanowire/graphene/PVDF heterojunction with high stability

The study of structural, optical and electrochromic properties of WO3:Co:Ni thin films deposited by spray pyrolysis

References

Semiconductor ultraviolet detectors

An Ultrahigh Responsivity (9.7 mA W −1 ) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga 2 O 3 Heterostructures

Graphene-β-Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

Ultraviolet Communications: Potential and State-Of-The-Art

Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Related Papers (5)

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

Hybrid graphene/GaN ultraviolet photo-transistors with high responsivity and speed

Ultra-thin GaN nanostructures based self-powered ultraviolet photodetector via non-homogeneous Au-GaN interfaces

A high-performance ultraviolet solar-blind photodetector based on a β-Ga2O3 Schottky photodiode

GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate.