Journal Article10.1149/1.1391872
A Comparative Study on the Roles of Velocity in the Material Removal Rate during Chemical Mechanical Polishing
TL;DR: In this paper, the authors compared the performance of three models: the original Preston equation, Tseng's model, 1 and a modified Preston equation which takes into account the deterioration in the abrasion efficiency of slurry.
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Abstract: velocity variation on polish rate, based on the original Preston equation, Tseng’s model, 1 and a modified Preston equation which takes into account the deterioration in the abrasion efficiency of slurry. Comparisons (curve fitting) will be made between experimental polish data and the simulated results based on the three models. The pressure dependence of the removal rate models and other parameters (e.g., weighting factor) are evaluated. The feasibility of the three models is discussed.
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Citations
Chemical mechanical planarization for microelectronics applications
TL;DR: An overview of the CMP process in general, the science and mechanism of polishing, different metal and dielectric CMP processes as well as the future trends are discussed in this paper.
592
Abrasive fine-finishing technology
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TL;DR: Abrasive fine-finishing technology is often applied as a final finishing process, and the selection of the right technology is crucial to obtaining the desired performance of functions such as fatigue life.
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Chemical mechanical polishing: Theory and experiment
Dewen Zhao,Xinchun Lu +1 more
TL;DR: In this article, the authors provide a basic description of the development, challenges, and key technologies associated with CMP, and summarize theoretical CMP models from the perspectives of kinematics, empirical, its mechanism (from the viewpoint of the atomic scale, particle scale, and wafer scale), and its chemical-mechanical synergy.
A plasticity-based model of material removal in chemical-mechanical polishing (CMP)
TL;DR: In this paper, the behavior of the hydroxylated layer is modeled as a perfectly plastic, material, and a mechanistic model for material removal rate (MRR) in CMP is developed.
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Mechanical Aspects of the Chemical Mechanical Polishing Process: A Review
TL;DR: In this paper, the authors focus on the mechanical aspects in CMP in terms of the process parameters and consumables of the CMP process that directly influence the material removal characteristics.
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References
Chemical-mechanical planarization
B. Roberts
- 30 Sep 1992
TL;DR: In this paper, the chemical-mechanical planarization (CMP) techniques applied to insulating layers in multilayered integrated circuits are discussed and the advantages and concerns of CMP are considered.
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