Journal Article10.1088/0034-4885/47/3/001
A comparative study of methods for thin-film and surface analysis
H W Werner,R P H Garten +1 more
TL;DR: In this article, a number of features characteristic of different thin-film analytical methods are reviewed and evaluated, and the principles, approach for quantification and prominent problems of the most commonly used methods (ESCA, AES, SIMS, LEIS, RBS and NRA) are discussed.
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Abstract: A number of features characteristic of different thin-film analytical methods are reviewed and evaluated. The principles, approach for quantification and prominent problems of the most commonly used methods (ESCA, AES, SIMS, LEIS, RBS and NRA) are discussed. Evaluation of the special advantages and disadvantages of the different methods points out the need for a synergetic multi-method approach in thin-film analysis.
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Citations
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TL;DR: In this article, the influence of the superficial Bi and Ga2O3 layers during surface solidification was investigated and the pattern-formation mechanism involved surface-catalysed heterogeneous nucleation.
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Practical surface analysis: state of the art and recent developments in AES, XPS, ISS and SIMS
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Evaluation of the kinetics and mechanisms of hybriding reactions
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References
Influence of the altered layer on depth profiling measurements
Harold F. Winters,J. W. Coburn +1 more
TL;DR: In this paper, a phenomenological theory of alloy sputtering is developed which suggests that in some instances the depth resolution of depth profiling measurements is limited by the time it takes to create a layer of altered chemical composition at the surface.
Dynamic surface composition changes in binary alloys under ion bombardment
TL;DR: In this paper, the surface composition of single-phase binary alloys was investigated with Auger Electron Spectroscopy (AES) and it was found that the altered layer thickness agrees with calculated mean penetration depths of the primary ions at 0.5 and 5 keV.
Microprobe design using a liquid gallium ion source
V.E. Krohn,G.R. Ringo +1 more
TL;DR: The beam from an EHD ion source using liquid gallium has been shown to have a brightness of 1.4 · 106 A cm−2 sr−1 at 21 kV.