Proceedings Article10.1109/ESSCIRC.2009.5326013
A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI
Alexandre Siligaris,Yasuhiro Hamada,Christopher Mounet,Christine Raynaud,Baudouin Martineau,N. Deparis,Nathalie Rolland,Muneo Fukaishi,Pierre Vincent +8 more
- 10 Nov 2009
- pp 168-171
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TL;DR: A 60GHz wideband power amplifier is fabricated in standard CMOS SOI 65nm process and the peak power added efficiency is higher than 20% for all applied VDD values.
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Abstract: A 60GHz wideband power amplifier (PA) is fabricated in standard CMOS SOI 65nm process. The PA is constituted by two cascode stages. Input, output and inter-stage matching use coplanar wave guide (CPW) transmission lines that have low losses thanks to the high resistivity SOI substrate. The PA measurements are carried out for supply voltages V DD going from 1.2V to 2.6V and achieve a saturation power of 10dBm to 16.5dBm respectively. The peak power added efficiency is higher than 20% for all applied V DD values.
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Citations
A 58–65 GHz Neutralized CMOS Power Amplifier With PAE Above 10% at 1-V Supply
W.L. Chan,John R. Long +1 more
TL;DR: A 60-GHz band, three-stage pseudo-differential power amplifier is implemented with input and output baluns on-chip and neutralization mitigates the intrinsic gate-drain feedback of each transistor for increased power gain and reverse isolation.
306
A 210GHz fully integrated differential transceiver with fundamental-frequency VCO in 32nm SOI CMOS
Zheng Wang,Pei-Yuan Chiang,Peyman Nazari,Chun-Cheng Wang,Zhiming Chen,Payam Heydari +5 more
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TL;DR: A 210GHz TRX with on-off-keying (OOK) modulation incorporating a 2×2 TX antenna array, a2×2 spatial combining power amplifier (PA), a fundamental frequency VCO, and a low noise amplifier (LNA) in a 32nm SOI CMOS process (fT/fmax=250/350GHz).
74
2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P 1dB and 74mW P DC
Aurelien Larie,Eric Kerherve,Baudouin Martineau,Lionel Vogt,Didier Belot +4 more
- 19 Mar 2015
TL;DR: The widespread deployment of high-data-rate wireless connectivity was enabled by the adoption of the WiGig (802.11ad) standard, consequently placing a challenge on integrated Power Amplifiers (PAs), implying a large Peak-to-Average Power Ratio (PAPR).
58
A 34% PAE, 18.6dBm 42–45GHz stacked power amplifier in 45nm SOI CMOS
Amir Agah,Hayg Dabag,Bassel Hanafi,Peter M. Asbeck,Lawrence E. Larson,James F. Buckwalter +5 more
- 17 Jun 2012
TL;DR: In this article, a two-stack 42-45GHz power amplifier is implemented in 45nm SOI CMOS, where transistor stacking allows increased drain biasing to increase output power.
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The path to 5G:mmWave aspects
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TL;DR: The discuss mmWave spectrum characteristics, circuits, RF system architecture, and their implementation issues, and the transmitter key components, i.e., the receiver, antenna, and packaging are reviewed.
References
A 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control
Ullrich R. Pfeiffer,D. Goren +1 more
TL;DR: A + 20 dBm power amplifier for applications in the 60 GHz industrial scientific medical (ISM) band is presented, which to date, is the highest reported output power at mm-wave frequencies in silicon without the need for power combining.
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TX and RX Front-Ends for 60GHz Band in 90nm Standard Bulk CMOS
Masahiro Tanomura
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TL;DR: This paper describes the design of a mm-wave power amplifier PA with reliability considerations for hot carrier injection (HCI) degradation, implemented in a standard IV 90 nm CMOS technology.
151
A 60GHz 1V + 12.3dBm Transformer-Coupled Wideband PA in 90nm CMOS
Debopriyo Chowdhury,Patrick Reynaert,Ali M. Niknejad +2 more
- 01 Feb 2008
TL;DR: This work uses on-chip transformers for a 60GHz PA as an integrated CMOS solution that achieves a ldB compressed output power and saturated power of +9dBm and +12.3dBm, respectively.
132
A 60GHz-band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS
W.L. Chan,John R. Long,Marco Spirito,John J. Pekarik +3 more
- 29 May 2009
TL;DR: Efficiency of the PA is also paramount for portable consumer electronic applications operating from a battery, such as short-range Gb/s communication SoCs operating in the unlicensed bands around 60GHz.
113
A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology
TL;DR: To the author's knowledge, this PA demonstrates the highest output power, with the highest gain among the reported CMOS PAs in V-band.
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