Proceedings Article10.1109/IEDM.2016.7838397
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Martin Trentzsch,Stefan Flachowsky,Ralf Richter,Jan Paul,Berthold Reimer,Dirk Utess,S. Jansen,Halid Mulaosmanovic,Stefan Müller,Stefan Slesazeck,J. Ocker,M. Noack,Johannes Müller,P. Polakowski,J Schreiter,Sven Beyer,Thomas Mikolajick,B. Rice +17 more
- 01 Dec 2016
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TL;DR: The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
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Abstract: We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention up to 250 °C is demonstrated and endurance up to 105 cycles was achieved. The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
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Citations
Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects
Daniel Lizzit,Thomas Bernardi,David Esseni +2 more
- 19 Sep 2022
TL;DR: In this article , a comprehensive TCAD analysis of 2D and 3D simulations for ferro-electric based FETs is presented, and it is shown that the multiple read conductance values experimentally observed in FeFETs stem from source to drain percolation current paths, which are governed by the polarization patterns in the ferroelectric domains.
Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO2-Based Ferroelectric Field-Effect Transistors.
Si-Yang Dai,Qi-jing Yang,Binjian Zeng,Shuaizhi Zheng,Xiangli Zhong,Jinjuan Xiang,Jian-Hua Gao,Jie Zhao,Jiajia Liao,Min Liao,Yichun Zhou +10 more
TL;DR: In this paper , the impact of total ionizing dose (TID) on erased and programmed states of HfO2-based FeFETs was investigated using an on-site read operation.
Interplay Between Switching and Retention in HfO 2 -Based Ferroelectric FETs
Halid Mulaosmanovic,Franz Muller,Maximilian Lederer,Tarek Ali,R. Hoffmann,Konrad Seidel,Haidi Zhou,J. Ocker,Stefan Mueller,Stefan Dunkel,Dominik Kleimaier,Johannes Müller,Martin Trentzsch,Sven Beyer,Evelyn T. Breyer,Thomas Mikolajick,Stefan Slesazeck +16 more
TL;DR: In this paper, a detailed investigation of the retention and switching properties of FeFETs fabricated in the 28-nm high- ${k}$ metal gate technology is reported. And a method for fast prediction of the device retention behavior, which can be easily adopted to judge different fabrication processes, is proposed.
Giant tunneling electroresistance in epitaxial ferroelectric ultrathin films directly integrated on Si
Kyoungjun Lee,Jinho Byun,Kun-Sang Park,Sung Mo Kang,Myeong Seop Song,Jung Mi Park,Jaekwang Lee,Shung Chull Chae +7 more
TL;DR: In this paper , the authors demonstrate a colossal resistance change in the ferroelectric tunnel junction with an On/Off ratio of 106 in a fluorite-structure HfO2 thin film integrated directly on a silicon wafer, which is inevitable for practical application.
References
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
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Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric
Chun-Hu Cheng,Albert Chin +1 more
TL;DR: In this article, a 1T FeMOS-based one-transistor ferroelectric-MOSFET was used to display DRAM functions of a 5 ns switching time, 1012 on/off endurance cycles, and 30 times on-off retention windows at 5 s and 85 °C.
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Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28 nm FeFET memory arrays
S. Mueller,Stefan Slesazeck,S. Henker,Stefan Flachowsky,P. Polakowski,J. Paul,Elliot John Smith,J. Muller,Thomas Mikolajick +8 more
TL;DR: In this article, the thickness dependent ferroelectric properties of Si:HfO2 with the memory characteristics of small (56-bit) FeFET arrays were correlated for the first time.
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