Proceedings Article10.1109/IEDM.2016.7838397
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Martin Trentzsch,Stefan Flachowsky,Ralf Richter,Jan Paul,Berthold Reimer,Dirk Utess,S. Jansen,Halid Mulaosmanovic,Stefan Müller,Stefan Slesazeck,J. Ocker,M. Noack,Johannes Müller,P. Polakowski,J Schreiter,Sven Beyer,Thomas Mikolajick,B. Rice +17 more
- 01 Dec 2016
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TL;DR: The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
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Abstract: We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention up to 250 °C is demonstrated and endurance up to 105 cycles was achieved. The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
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Citations
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Scaling behavior of ferroelectric FET with reduction in number of domains in ferroelectric layer
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References
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
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Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric
Chun-Hu Cheng,Albert Chin +1 more
TL;DR: In this article, a 1T FeMOS-based one-transistor ferroelectric-MOSFET was used to display DRAM functions of a 5 ns switching time, 1012 on/off endurance cycles, and 30 times on-off retention windows at 5 s and 85 °C.
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Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28 nm FeFET memory arrays
S. Mueller,Stefan Slesazeck,S. Henker,Stefan Flachowsky,P. Polakowski,J. Paul,Elliot John Smith,J. Muller,Thomas Mikolajick +8 more
TL;DR: In this article, the thickness dependent ferroelectric properties of Si:HfO2 with the memory characteristics of small (56-bit) FeFET arrays were correlated for the first time.
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