Proceedings Article10.1109/IEDM.2016.7838397
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Martin Trentzsch,Stefan Flachowsky,Ralf Richter,Jan Paul,Berthold Reimer,Dirk Utess,S. Jansen,Halid Mulaosmanovic,Stefan Müller,Stefan Slesazeck,J. Ocker,M. Noack,Johannes Müller,P. Polakowski,J Schreiter,Sven Beyer,Thomas Mikolajick,B. Rice +17 more
- 01 Dec 2016
409
TL;DR: The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
read more
Abstract: We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention up to 250 °C is demonstrated and endurance up to 105 cycles was achieved. The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Multilevel Cell Ferroelectric HfZrO FinFET With High Speed and Large Memory Window Using AlON Interfacial Layer
Siao-Cheng Yan,Chen-Han Wu,Chong-Jhe Sun,X. Zhong,Chin-Chen Chang,Hao-Kai Peng,Yung-Hsien Wu,Yung-Chun Wu +7 more
TL;DR: In this article , scaled ferroelectric fin field effect transistors (Fe-FinFETs) based on HfZrO2 were fabricated and characterized for multi-level cell (MLC) operations.
1
Analysis and Design of Stacked-Nanosheet FeFET Synapse Conductance Response under Identical Pulse Scheme for Neuromorphic Applications
Heng-Li Lin,Pin Su +1 more
- 07 Mar 2023
TL;DR: In this article , the synapse response under the identical gate pulse stimulation scheme for Stacked-Nanosheet FeFET was investigated and analyzed by using Monte Carlo nucleation-limited-switching (NLS) based model.
1
Fixed charges at the HfO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e309" altimg="si3.svg"><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>/SiO2 interface: Impact on the memory window of FeFET
Masud Rana Sk,Shubham Pande,F. Müller,Yannick Raffel,Maximilian Lederer,L. Pirro,Sven Beyer,Konrad Seidel,Thomas Kämpfe,Sourav De,Bhaswar Chakrabarti +10 more
TL;DR: In this article , the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations.
1
Interfacial Dipole Modulation Device With SiO X Switching Species
Giuk Kim,Taeho Kim,Sanghun Jeon +2 more
TL;DR: In this paper, a SiOx switching species together with HfO and TiO encapsulating layers was used to overcome the memory window limitation of conventional IDM stack structures, which can be used to develop practical NVM devices.
Enabling New Computing Paradigms with Emerging Symmetric-Access Memories
Juejian Wu,Mingyang Gu,Hongtao Zhong,Tao Yunsong,Fei Qiao,Huazhong Yang,Xueqing Li +6 more
- 17 Jul 2019
TL;DR: 2T1R is proposed, a new symmetric memory circuit design based on two-terminal resistive devices, such as RRAM and MTJ, that exhibits improved leakage power and scaling capability, as compared with the existing RRAM-based crossbar symmetricmemory design.
1
References
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
2.3K
Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric
Chun-Hu Cheng,Albert Chin +1 more
TL;DR: In this article, a 1T FeMOS-based one-transistor ferroelectric-MOSFET was used to display DRAM functions of a 5 ns switching time, 1012 on/off endurance cycles, and 30 times on-off retention windows at 5 s and 85 °C.
133
Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28 nm FeFET memory arrays
S. Mueller,Stefan Slesazeck,S. Henker,Stefan Flachowsky,P. Polakowski,J. Paul,Elliot John Smith,J. Muller,Thomas Mikolajick +8 more
TL;DR: In this article, the thickness dependent ferroelectric properties of Si:HfO2 with the memory characteristics of small (56-bit) FeFET arrays were correlated for the first time.
Related Papers (5)
Stefan Dunkel,M. Trentzsch,Ralf Richter,P. Moll,C. Fuchs,O. Gehring,M. Majer,S. Wittek,B. Muller,Thomas Melde,Halid Mulaosmanovic,Stefan Slesazeck,Stefan Müller,J. Ocker,M. Noack,D. A. Lohr,P. Polakowski,Johannes Müller,Thomas Mikolajick,J. Hontschel,B. Rice,John Pellerin,Sven Beyer +22 more
- 01 Dec 2017
Johannes Müller,T. S. Boscke,Stefan Müller,Ekaterina Yurchuk,P. Polakowski,Jan Paul,Dominik Martin,Tony Schenk,K. Khullar,A. Kersch,Wenke Weinreich,S. Riedel,Konrad Seidel,Amit Kumar,Thomas M. Arruda,Sergei V. Kalinin,Till Schlösser,Roman Boschke,R. van Bentum,Uwe Schröder,Thomas Mikolajick +20 more
- 01 Dec 2013