Proceedings Article10.1109/IEDM.2016.7838397
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Martin Trentzsch,Stefan Flachowsky,Ralf Richter,Jan Paul,Berthold Reimer,Dirk Utess,S. Jansen,Halid Mulaosmanovic,Stefan Müller,Stefan Slesazeck,J. Ocker,M. Noack,Johannes Müller,P. Polakowski,J Schreiter,Sven Beyer,Thomas Mikolajick,B. Rice +17 more
- 01 Dec 2016
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TL;DR: The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
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Abstract: We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention up to 250 °C is demonstrated and endurance up to 105 cycles was achieved. The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
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Citations
FeFET-Based MirrorBit Cell for High-Density NVM Storage
Paritosh Meihar,Srinu Rowtu,Vivek Saraswat,Sandip Lashkare,Halid Mulaosmanovic,Ajay Kumar Singh,Stefan Dünkel,Sven Beyer,Udayan Ganguly +8 more
TL;DR: High-density nonvolatile memory using MirrorBit cell based on FeFET with doubled storage capacity.
Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2
Yixin Qin,Zijian Zhao,Suhwan Lim,Kijoon Kim,K.J. Kim,Wanki Kim,Daewon Ha,Vijaykrishnan Narayanan,Kai Ni +8 more
TL;DR: This study investigates the memory window of ferroelectric FETs, clarifying its definition and demonstrating a 4.8-V memory window with a 20-nm HfO2 layer, suitable for high-density storage applications, including multilevel cell and triple-level cell technologies.
2
Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors
01 Mar 2023
TL;DR: In this paper , low-frequency noise (LFN) characterization of ferroelectric field effect transistor (FeFET) was performed for ON and OFF memory state of the devices to study the effect of polarization on the noise performance.
2
Interface Dipole Modulation in HfO 2 /SiO 2 MOS Stack Structures
Noriyuki Miyata,Jun Nara,Takahiro Yamasaki,Kyoko Sumita,Ryousuke Sano,Hiroshi Nohira +5 more
- 01 Dec 2018
TL;DR: In this article, an electric-field-induced interface dipole modulation (IDM) in HfO 2/1-ML TiO 2 /SiO 2 MOS stack structures was demonstrated, and rearrangement of interfacial TiO configuration by an electric field was theoretically demonstrated to cause the potential modulation.
2
Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory
Chia-Chi Fan,Yu-Chien Chiu,Chien Liu,Wen-Wei Lai,Chun-Yuan Tu,Ming-Huei Lin,Tun-Jen Chang,Chun-Yen Chang,Guan-Lin Liou,Hsiao-Hsuan Hsu,Cheng-Yu Tang,Chun-Hu Cheng +11 more
- 26 Jul 2018
TL;DR: In this paper, the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO was investigated and the transient current pulse measurement was employed to verify the switching mechanism.
2
References
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TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
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Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric
Chun-Hu Cheng,Albert Chin +1 more
TL;DR: In this article, a 1T FeMOS-based one-transistor ferroelectric-MOSFET was used to display DRAM functions of a 5 ns switching time, 1012 on/off endurance cycles, and 30 times on-off retention windows at 5 s and 85 °C.
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Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28 nm FeFET memory arrays
S. Mueller,Stefan Slesazeck,S. Henker,Stefan Flachowsky,P. Polakowski,J. Paul,Elliot John Smith,J. Muller,Thomas Mikolajick +8 more
TL;DR: In this article, the thickness dependent ferroelectric properties of Si:HfO2 with the memory characteristics of small (56-bit) FeFET arrays were correlated for the first time.
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