Journal Article10.1557/PROC-766-E5.6
3D System Integration Technologies
Peter Ramm,Armin Klumpp,Reinhard Merkel,Josef Weber,Robert Wieland,Andreas Ostmann,Jürgen Wolf +6 more
TL;DR: In this paper, a low-cost fabrication approach for vertical system integration is introduced, which takes advantage of wafer level processing to avoid increasing package sizes and expensive single component assembling processes.
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Abstract: In the last years strong efforts were made to miniaturize microelectronic systems. Chip scale packages, flip chips and multichip modules are now commonly used in a great variety of products (e. g. mobile phones, hand-held computers and chip cards). Future microelectronic applications require significantly more complex devices with increased functionality and performance. Due to added device content, chip area will also increase. Performance, multi-functionality and reliability of microelectronic systems will be limited mainly by the wiring between the subsystems (so called “wiring crisis”), causing a critical performance bottleneck for future IC generations. 3D System Integration provides a base to overcome these drawbacks. Furthermore, systems with minimum volume and weight as well as reduced power consumption can be realized for portable applications. 3D integrated systems show reduced chip areas and enable optimized partitioning, both which decrease the fabrication cost of the system. An additional benefit is the enabling of minimal interconnection lengths and the elimination of speed-limiting inter-chip interconnects. 3D concepts which take advantage of wafer level processing to avoid increasing package sizes and expensive single component assembling processes have the potential to integrate passive devices resistors, inductors and capacitors into the manufacturing system and provide full advantage for system performance. The ITRS roadmap predicts an increasing demand for systems-on-a-chip (SoC) [1]. Conventional fabrication is based on embedded technologies which are cost intensive. A new low cost fabrication approach for vertical system integration is introduced. The wafer-level 3D SoC technology, optimized to the capability for chip-to-wafer stacking has the potential to replace embedded technologies based on monolithic integration.
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Citations
Thermo-Mechanical Reliability of 3D-integrated Microstructures in Stacked Silicon
Bernhard Wunderle,R. Mrossko,O. Wittler,Eberhard Kaulfersch,Peter Ramm,Bruno Michel,Herbert Reichl +6 more
TL;DR: In this article, the authors investigated the thermo-mechanical reliability of inter-chip-vias for 3D chip stacking after processing and under external thermal loads relevant for the envisaged field of application (mobile, automotive) by Finite Element simulation.
78
IMC bonding for 3D interconnection
Katsuyuki Sakuma,Kuniaki Sueoka,Sayuri Kohara,Keiji Matsumoto,Hirokazu Noma,Toyohiro Aoki,Yukifumi Oyama,Hidetoshi Nishiwaki,P.S. Andry,Cornelia K. Tsang,John U. Knickerbocker,Yasumitsu Orii +11 more
- 01 Jun 2010
TL;DR: In this article, the authors used annular tungsten TSVs (Through Silicon Vias) and Cu studs with low-volume solder micro-bumps for 3D integration.
66
Fabrication of Application Specific Integrated Passive Devices Using Wafer Level Packaging Technologies
Kai Zoschke,M. J. Wolf,Michael Topper,Oswin Ehrmann,T. Fritzsch,K. Kaletta,F.-J. Schmuckle,Herbert Reichl +7 more
TL;DR: In this article, the fabrication of integrated passive devices (IPDs) using wafer level thin film fabrication is discussed, and a brief overview of the different possibilities for the realization of IPDs using Wafer level packaging technologies is presented.
62
References
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TL;DR: In this article, the authors proposed a 3D IC architecture with three active layers, and the technical issues for realizing practical 3-D IC, i.e., the technology for fabricating high-quality SOI crystal on complicated surface topology, crosstalk of the signals between the stacked layers, total power consumption and cooling of the chip, are discussed.
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Thermal modeling and management in ultrathin chip stack technology
Stephane Pinel,Alain Marty,J. Tasselli,J.P. Bailbe,E. Beyne,R. Van Hoof,Santiago Marco,Joan Ramon Morante,Olivier Vendier,M. Huan +9 more
TL;DR: In this paper, a thermal modeling for power management of a new three-dimensional (3-D) thinned dies stacking process was presented, where the specific behaviors in such stacked structure and to optimize the design rules were analyzed.
Evaluation of a three-dimensional memory cube system
TL;DR: In this article, a high degree of interconnect and wiring redundancy was used to guarantee connection of all the chips in the cube to the applied control signals and data lines, and extensive electrical modeling and simulation of the cube interconnect circuitry including the chip transfer metal, interchip bus lines and PGA substrate were performed as part of the design and later verified.
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