Abstract: Trigger transistors of the DICE CMOS memory cell can be divided into two groups and spaced topologically; and if the effect of single nuclear particle affects transistors of only one group, no upset of the cell state occurs, while the cell transforms into the unsteady state. If transistors of the second group are simultaneously affected, and this effect exceeds the threshold one, then the upset of the initial state occurs. If the effect on the second group is lower than the threshold one, then the cell returns to the initial steady state from an unsteady one. Characteristics of the DICE CMOS memory cell with a 28-nm design rule are simulated and analyzed for unsteady states caused by the influence of a single nuclear particle on transistors of only one or both groups of cell transistors.

Abstract: A rational methodological approach to the evaluation of the total dose hardness of CMOS microcircuits with respect to low dose rate effects supported by the results of the simulation analysis and experimental studies of a wide range of products is presented. This approach makes it possible to choose the necessary and sufficient amount of radiation researches that provide accurate and informative engineering evaluation of radiation hardness of CMOS microcircuits for use in space hardware.

Abstract: A method for the design of high-speed components of integrated circuits based on III–V semiconductors using complementary logic principles, which provides an increase in performance and degree of integration of microwave integrated circuits, is considered.

Abstract: A method for improving the efficiency of using laser radiation (LR) energy is discussed to implement high levels of dose rates by reducing the radiation wavelength. Generally, the optimal range of LR energy for the simulation of the transient radiation response in CMOS SOS/SOI microcircuits depends on the technological characteristics of production and ranges from 0.9 to 0.75 μm.

Abstract: The influence of the electric operating regime of hybrid pulse DC-DC converters on the number of single event transient and, consequently, the sensetive parameters is analyzed. The predicted dependence of the single-effect characteristic in hybrid stabilizers on the electric regime in general and the feedback performance in particular is confirmed experimentally. The recommendations for carrying out the certification tests for the sensetive of hybrid voltage stabilizers to single effects are outlined.

Abstract: The provided examples demonstrate the application of a simulator-based virtual scanning electron microscope (SEM) in certification of test object sizes on a low-voltage SEM and in calibration of a high-voltage SEM operating in the slow secondary electron detection mode. Using the virtual SEM, the problem of comparing different SEM calibration techniques is solved.

Abstract: An approach to evaluating the sensitivity parameters, namely, sections of single event effects in the linear loss energy transfer function, using a charge collection model by a point sensitive area is proposed. The presented model satisfactorily describes the experimental results based on changes of sections of single event effects on the linear energy transfer and allows one to relatively simply take into account angular dependences for incident ions. The approach for the evaluation of the sensitivity of integrated circuits to the effects of multiple bit upsets is proposed.

Abstract: The results of the experimental comparison of minimization programs for various forms of representations of the systems of completely specified Boolean functions are described. The experiments show that the minimization programs of multilevel representations based on the Shannon expansion and decomposition are preferential when synthesizing combinational logic circuits from library elements compared to the minimization programs in a class of disjunctive normal forms.

Abstract: A simulation procedure is proposed that allows one to find temperature distributions in electronic devices and to evaluate thermal resistances for the whole device and for its individual structural elements. The results of calculating the temperature distribution in a multifinger high-power microwave transistor (HP-MWT) are presented. In the case of the model under study, it is found that placing a heat distribution element (HDE) made of polycrystalline CVD diamond between the crystal and the heat sink reduces the total thermal resistance of the transistor structure and decreases the overheat of the structure by approximately 2%. For the model of the multifinger HP-MWT, the dependences of the thermal resistance on the thickness and width of the HDE are obtained. The HDE size optimal in terms of the minimum thermal resistance of the structure is found to be 6000 × 6000 × 800 μm. For the model of the multifinger HP-MWT with the HDE, the maximum temperatures in the area of heat release are compared for various values of convection. Natural air convection is found to be sufficient for heat remove.

Abstract: The degradation of the undergate dielectric of MOS structures belongs to the main factors determining the service life of modern CMOS VLSIs. The experimental data indicate that the effect of heavy charged particles leads to lowering the reliability characteristics of thin (thinner than 10 nm) dielectrics and the appearance of leakage currents. As this takes place, the effects caused by the effect of heavy charged particles turn out to be latent. In the article, a model of the formation of the leakage current of the dielectric caused by the effect of heavy charged particles is proposed. The model is based on the solution of the set of kinetic equations and makes it possible to overcome a series of limitations of the known percolation approach.

Abstract: In the formalism of quantum operations, we investigate the effect of the amplitude and phase relaxation on the evolution of quantum states. A model of the polarizing qubit, whose noises depend on the spectral degree of freedom that manifests itself in the process of light propagation in the anisotropic medium with dispersion, is discussed. An approximate analytical model is proposed for evaluating the effect of the phase plate on the polarizing state, taking into account the dispersion of light.

Abstract: The experimental results on scanning probe lithography (SPL)—the formation of lithographic masks using scanning probe microscope—are presented. Polymethylmethacrylate (PMMA)-based masks prepared by the SPL method are used to form metal nanoparticles of the specified sizes and shape, as well as the metallic nanowires connecting the contact areas. The analysis of various SPL modes showed that the procedure of point indentation with the switched-on microscope feedback is optimal for the formation of round nanoparticles. When forming the rectangular particles, the procedure of multiple scanning of one region in the contact mode is optimal. The quality of lithographic masks can be substantially increased by the additional use of chemical etching to remove excess PMMA after the mask is formed. The topography and magnetization structure of the formed structures were monitored by atomic force microscopy and magnetic force microscopy.

Abstract: We considered design concept for implementation of electrically programmable nonvolatile memory manufactured using standard CMOS process. We also presented the characteristics of the experimental memory cell implemented using CMOS process with design rule of 0.18 μm.

Abstract: A technique for estimating the reliability of multilayer metallization of integrated circuits at constant temperature has been implemented and tested. Statistical processing of the data has been carried out and the main reliability parameters of conductors have been calculated. The main types of failure, which commonly arise upon electromigration testing at constant temperature, have been demonstrated and analyzed.

Abstract: The problems of studying the spectral characteristics of extended photonic molecules called photonic isomers with the use of different quantum-mechanical approaches are considered. In Part I, the theory of the interaction between photonic molecules containing NV centers with a probe laser pulse is described. The electron-photon spectrum is classified in accordance with the system parameters by the example of a diatomic photonic molecule.

Abstract: Survey emission spectra of plasma-forming gases such as chlorine, hydrogen chloride, argon, and hydrogen, as well as the spectral composition of these gases, are investigated in the presence of the gallium arsenide semiconductor plate. The reference lines and bands for the spectral etching rate monitoring by the emission intensity of the lines and bands of the etching products are selected. It is assumed that the relation between the emission intensity of the etching products of GaAs and the etching rate in the plasma of chlorine, hydrogen chloride, and their mixtures with argon and hydrogen is described by the directly proportional dependence, which points to the possibility of the real-time control of etching using the spectral method.

Abstract: A thin-film ferroelectric capacitor was produced on a silicon substrate. A multilayer strontium titanate film of 280 nm thickness is the base of the capacitor. This film was made by the sol gel technique at the annealing temperature of 750°C. The bottom electrode was produced from platinum and the upper one was produced from nickel. The mean value of the dielectric constant is 153 and the standard deviation is 12. The mean value of the dielectric loss tangent is 0.06 and the standard deviation is 0.01.

Abstract: Methods are proposed to estimate the relationship between probabilistic and order models for simulating functional failures of the large-scale integrated circuits (LSICs) based on Brauer’s fuzzy digital automaton and on a probabilistic automaton for reliability evaluation In the first case, the behavior of the LSIC is determined by varying static and dynamic parameters; in the second case, by the statistical straggling of threshold failure levels

Abstract: Currently, the global production of permanent magnets is about 150000 tons per annum, in which the share of ceramic magnets made of barium and strontium hexaferrites is more than 90%. Anisotropic hexaferrites have outstanding magnetic properties; in these materials, the texture is formed by pressing in the magnetic field, i.e., the hexagonal axes of flaky powder particles are oriented in the direction of the magnetic field; thus, the magnetic properties in this direction increase and decrease in the other directions. However, in a great number of applications, cheaper isotropic magnets, which have inferior magnetic properties, are successfully used; in these magnets, the magnetic axes of the particles are distributed uniformly in all directions, so magnetic properties are the same in all directions. The well-known technologies for fabricating isotropic magnets do not provide sufficient isotropy of magnetic properties, since the texture, which is due to the orientation of flaky hexaferrite particles, is formed in the process of pressing, which, in turn, reduces the magnetic energy of ring magnets in the radial direction. In this paper, we investigate the possibility of obtaining barium hexaferrite with isotropic properties by using a short manufacturing scheme, which includes no operations of diffusion annealing and grinding. It is shown that such a manufacturing scheme, which involves pressing the mixture (granulated with a binder) of the initial components with the near-spherical shape of particles, makes it possible to improve the isotropic properties of the magnet.

Abstract: An integral microcircuit (IC) for processing of photosignals of a ring laser, which is a sensitive element of a unit of laser gyroscopes, is created on an ABMK-1.3 analog array. The IC contains the current-to-voltage converter, a low-pass filter (LPF), and bandpass filter (BPF). The input current-output voltage conversion coefficient (KIU) and transmission band at a level of −3 dB (Δf−3 dB) LPF and BPF are controlled by varying ratings of external RC elements. Type LPF parameters KIU = 0.2 V/μA and Δf−3 dB = 0–15 Hz, and those of the BPF KIU = 1.2 V/μA and Δf−3 dB = 15 Hz-1.6 MHz. Circuit designs of separate cascades of the microcircuit and experimental characteristics are presented.

Abstract: The initial results of the application of the concept of a charge swap in the structure of a photoelectric converter (PEC) are considered. The speed of the processes of separating and collecting photogenerated charge carriers in the traditional structure of silicon solar cells with charge pumps is analyzed. The charge pumps are local n + regions in the Si-base of p-type conduction. An equivalent circuit is offered as a replacement overlay transistor. The experimental results of the influence of charge pumps on the light volt-ampere characteristic of solar cells are presented. The technological aspects forming the structure of a photoelectric converter with charge pumps are discussed.

Abstract: This paper describes the capabilities of the Bosch process simulation for microand nanostructures with the aid of NEMO ETCHING software. The heart of this program is an original hybrid algorithm, which is based on the Monte–Carlo method and on the cell-graph approximation of the string model. It is shown that this algorithm considerably improves the performance of the model without loss of accuracy. The etching model is calibrated according to the real Bosch experiment process. The comparison between the simulation and experimental results shows this model is highly accurate.

Abstract: The method of periodically doped channel was originally regarded as an application for transistor structures based on organic semiconductors. The possibility of channel conductivity modulation in CMOS transistors, however, is of high interest for high temperature electronics. To provide high conductivity of the nanoregions that reduce the overall effective length of the channel due to the geometric factor a the dope density in them must be high. However, the lateral drift of dope may result in closing of the doped nanoregions and in degradation of the subthreshold characteristics of the transistor. To handle this, as a dope additive (for the N channel of the MOS transistor), it is reasonable to use arsenic with its subsequent activation by rapid thermal annealing (RTA). Using programs for process simulation, we construct the device-technological model of a periodically doped channel field-effect transistor (PDCFET). This model allows one to solve the problem of technological implementation and characterization of the transitions manufactured in a 0.18–0.5 μm process with gate regions based on nanomasks which operate under extreme thermal conditions.

Abstract: The Ti/Al/Ni/Au multilayer metallization system is widespread in the technology of n-GaN-based devices. Herein, the mechanisms of the formation of the surface roughness of the Ti/Al/Ni/Au metallization (with 300 nm hillocks) upon annealing in a nitrogen atmosphere for 30 s at a temperature of 850°C, which creates problems in further lithographic processes, and the ways of overcoming this disadvantage have been studied. The formation of a rough surface during the annealing of a multilayer metallization, associated with the interaction of the constituent metals, has been investigated with the Ti/Al/Ni and Ti/Al/Ni/Au systems. An increase in the sheet resistance of both metallization systems as the annealing temperature is raised can be explained by the interdiffusion of metals and the growing degree of interaction between them with the formation of various intermetallic compounds, exhibiting a far higher specific resistance than that of the initial metals. The X-ray analysis has confirmed the origination of the main NiTi, Al3Ti, and Ni2Al3 intermetallic phases in the Ti/Al/Ni three-layer metallization upon annealing. The surface of the Ti/Al/Ni metallization system has become rougher upon annealing; however, large hemispherical convexes (like those in the Ti/Al/Ni/Au metallization) have not been generated. This has refuted the hypothesis of the balling-up of the molten Al–Ni alloy on the surface of the Ti/Al/Ni metallization. To reduce the amount of an Au–Al liquid phase formed during the annealing, which is the reason that renders the Ti/Al/Ni/Au metallization surface rough, the Au layer thickness was reduced to a minimum, at which the contrast of the metallization elements to the semiconductor surface is sufficient for self-aligning during electron-beam lithography. It has been found that the 50-nm-thick Au layer serves a satisfactory contrast. At such a thickness of the Au layer, the metallization surface morphology improved considerably: the roughness decreased from 300 to 80 nm, and the surface become specular.

Abstract: In this paper, a new technique is proposed for synthesis of porous silicon (PSi) layers with silver nanoparticles based on the method of low-energy high-dose metal ion implantation into Si. In order to demonstrate this technique, the implantation at room temperature of a polished Si wafer by Ag+ ions with the ion energy of 30 keV, ion dose of 1.5 × 1017 ion/cm2, and ion current density of 8 µA/cm2 is carried out. Using methods of high resolution scanning electron and atomic-force microscopy, electron probe microanalysis, and Raman scattering, it is shown that ion implantation results in the formation, on the surface of irradiated Si, of a thin amorphous layer of PSi with the average pore size of 150–180 nm, a pore depth of about 100 nm, and wall thickness between pores of about 30–60 nm. Moreover, the PSi structure contains Ag nanoparticles 5–15 nm in size. It is established that, during the ion implantation, the sputtering of the Si surface by Ag+ ions takes place, which was not observed previously. Based on the data obtained, it is concluded that, in contrast to chemical techniques, the proposed physical technique for PSi formation can be integrated into the modern advanced process of fabricating and improving electronic circuits based on industrial ion implantation.

Abstract: Two-dimensional models of thermal oxidation of silicon, including those implemented using the SProcess application in the TCAD SenTaurus environment, are analyzed. A number of practically-important test structures, which demonstrate the peculiarities of the modeling, are used for the numerical experiments. In the course of the analysis and numerical modeling, the most accurate model is found that closely describes various “thin” phenomena occurring in the course of thermal oxidation of nonplanar silicon surfaces; the model is in close agreement with the experimental data. It is shown that the effect of various nonlinear mechanical phenomena is to be taken into account to provide the adequacy of the modeling. The model is calibrated to provide consistent results and increase the accuracy of modeling.

Abstract: The plasma-chemical cyclic process with alternation of etching and passivation stages (steps) is used to form trenches several tens of nanometers in width in silicon. The developed technology is characterized by a small duration of the stages (about 1 s); at each step, the etching time amounts to fractions of a second with a considerable amount of time being spent on the removal of a passivation layer from the bottom of the trench. The time of a pause between the steps is shown by the experiments to be a crucial parameter affecting the profile shape. To improve the selectivity of the etching process with respect to the mask, we use low values of the RF bias at the etching step (10–20 W) and rather high working pressures (more than 7 Pa). The experiments show that trenches can be formed with a mask underetch of about 2–3 nm, which is comparable to the wall roughness, for a high selectivity of the etching process with respect to the mask. For the trenches formed, the width is 30–50 nm, the aspect ratio is above 30, and the wall slope is 89°–90°.

Abstract: The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model.

Abstract: An installation for etching and depositing thin-film structures equipped with a Neitral-L original source, which forms a ribbon beam of rapid neutral particles obtained when using various working gases, is developed. A system for the source neutralization and separation ensures hundred-percent beam neutralization. In order to increase the treatment uniformity of the substrates, a system with a programmable controller of the reciprocal motion of the substrate holder relative to the ribbon beam is built-in into the processing chamber of the installation. The technical possibilities of the installation are investigated experimentally. The etching and deposition processes of materials are performed when using various working gases.