Abstract: The optical transmission spectra and electrical properties of langasite (La3Ga5SiO14) and langatate (La3Ta0.5Ga5.5O14) single crystals are studied experimentally in relation to the oxygen concentration in an argon-oxygen atmosphere of growth. The variation of langatate conductivity with temperature under a constant electric field is examined over the range 20 to 500°C. Its dependence on current-carrying material is investigated for an Ir, Au/Ti, or Ag/Cr coating.

Abstract: The estimations of equivalent values for linear energy transfer of heavy charged particles based on the results of experimental investigations of sensitivity of LSICs to local radiation effects with the use of the procedure of local laser irradiation are presented. The possibility of recalculation of the energy of laser radiation into equivalent values of linear energy transfer with the use of the measurements of the ionization reaction in the supply circuit of LSIC is substantiated. Uncertainties caused by the characteristics of the interaction of optical radiation with semiconductor structures are eliminated in the suggested procedure.

Abstract: The problems of simulation and characterization of VLSI standard cell libraries designed on the basis of semiconducting CMOS-technologies of the deep submicron and nanometer level are considered. The acceleration methods of the characterization process resulted in the identification of parameters of logic cell macromodels under the multiple simulation of cells on a circuit level for different versions of input actions and under the values of process-dependent parameters and modes of circuit operation. The algorithms of constructing the circuit characterization are directed at decreasing computational expenditures and ensuring the required accuracy of the macromodels. The results of the comparative analysis of different versions of the proposed algorithms are given.

Abstract: A new mirror CMOS circuit implementation of a one-bit full-adder cell is proposed. Using CMOS technology provides zero static power consumption and the freedom from fractional voltage levels at the internal nodes (no voltage recovery is needed). The solution proposed is shown to be superior in carry speed to any alternative CMOS implementation reported so far, and should therefore be suitable for building high-speed multibit adders.

Abstract: Two-phase submicron CMOS logic elements with a design standard of 0.18 μm are analyzed that are based on two symmetric signal transfer and conversion logical channels (phases). The basic elements of two-phase CMOS logic are 2- and 4-transistor CMOS converters that form two-phase inverters, NAND elements, and D and RS triggers. Two-phase CMOS inverters based on 2-transistor converters with transversely connected inputs and elements based on these inverters, NAND elements and D and RS triggers also with transversely connected constituent elements, are the best ones with respect to the set of parameters, including the failure resistance to single-event upsets (with respect to the value of the critical switching charge), size, and switching time. The values of the critical switching charges of the elements of two-phase CMOS logic under exposure to individual nuclear particles that induce ionization currents with fall-time constants (diffusion component) from 0.3 ns to 2.0 ns are determined.

Abstract: The main approaches and results concerning an increase in the efficiency of broadband radioabsorbing nickel-zinc ferrites are reported. Requirements to the microstructure that ensure the expansion of the radio-absorption frequency range to 30–830 MHz have been developed. The effect of dopants on the frequency dependence of the absorption of electromagnetic waves has been analyzed. The efficiency of the formation of the coarse-grain structure with grain boundary layers having a high dielectric constant has been confirmed. It has been found that both doping with bismuth oxide and the introduction of a coarse-grain fraction of the same composition into a batch before the sintering of the powder enhance the absorbing properties of the ferrites.

Abstract: A compact BSIMSOI-RAD macromodel for SOI/SOS CMOS transistors is developed that takes into account the radiation effects An automated procedure for determination of macromodel parameters is described and shown to be useful for analyzing radiation hardness of CMOS IC fragments depending on the total absorbed dose The simulation time is estimated

Abstract: Computer simulations with the Spectre circuit simulator from Cadence Design Systems and a proton-accelerator experiment are conducted to investigate the relationship of single-event-upset (SEU) susceptibility to memory-cell layout in the context of a 0.18-μm CMOS SRAM using the dual interlocked storage cell (DICE) technology with differing separations of the pair transistors designed to store a 0 or 1, namely, 0.9 and 2.5 μm, respectively. The simulated values of critical charge for an upset are found to be greater by a factor of 10 for the wider separation. With 1-GeV proton irradiation, using the wider separation of pair transistors is found to reduce the SEU count by a factor of 5.5–15 (depending on the supply voltage). In the experiment, lowering the supply voltage of the memory bank from 1.8 to 0.7 V is found to increase on average the SEU cross section by a factor of 3. Close agreement is observed between the simulated and measured results.

Abstract: An analysis of an integrated MOSFET-based Gilbert-cell mixer is presented Methods are described for calculating its major ac and dc parameters, including those characterizing conversion gain, noise performance, and nonlinear distortions The performance of the proposed implementation is estimated Comparisons are made with computer simulations

Abstract: Chlorine-containing gases are widely used in etching series of materials. In this field, hydrogen chloride is one of the most promising plasma reagents. In this paper, emission spectroscopy techniques have been applied to study an etching of gallium arsenide in HCl plasma. The gas emission spectrum consists only of atomic components. The excitation of atoms is carried out with an electron impact, while their collapse is accompanied by emission deactivation. The control of the etching process can be performed spectrally using the intensities of the gallium monochloride and gallium resonant lines. The induction period of about 1 min is observed in the spectral and gravimetric kinetic curves of etch gallium arsenide, but it is absent in samples previously subjected to etching.

Abstract: The problem of high-frequency conductivity of a thin cylindrical metal film is solved using the kinetic method. The kinetic boundary conditions taking into account the dependence of the reflectivity coefficient on the angle of incidence θ between the electron velocity vector and a normal to the metal surface are used. The obtained results are compared with the theoretical calculations for the Fuchs diffusion-reflection boundary conditions.

Abstract: Application of nanoelectromechanical systems (NEMSs) as one of the structural components of quantum computers assumes a high level of coherent control of their state. In this case, such objects could perform certain functions in the coding, storing, and transportation of quantum information, and serve as auxiliary elements for processing such information. This paper contains a survey of basic theoretical and experimental results proving the possibility of coherent manipulations with phonon states of NEMSs, their cooling to the ground vibrational state, and organization of controllable interaction between them and other quantum information carriers.

Abstract: The main results of designing a 32-channel integrated microcircuit for microstrip detectors of the Nuclon Project of Roskosmos are considered. The microcircuit is implemented by using 0.35 μm CMOS technology of AMIS (Belgium). The description of the integrated microcircuit and its main electrical parameters, features of the circuit technology, and crystal topology are presented. Record parameters of the dynamic range of readable signals (more than 100 pC) with a detector capacity of up to 100 pF exhibited by the microcircuit.

Abstract: A technique for determining the sizes of vacancies and pores in metals by positron annihilation spectroscopy (PAS) in the angstrom and nanometer ranges is proposed. Following the proposed technique, the radii of vacancy-type defects in iron are estimated. The obtained results are of special interest for research programs in which properties of critical engineering materials [49–55] are studied using beams of slow positrons at positron facilities (see Research Program at the LEPTA Facility, I. Meshkov for LEPTA collaboration).

Abstract: The results of the development of the delta-sigma modulator of the analog-to-digital converter with ternary data encoding are presented in the paper. The oversampling ratio is 54; the clock frequency selected is 100 MHz. The suggested circuit engineering solutions are designed for manufacturing using the standard 0.18 μmMOS technology and bipolar power of ±0.9 V. Circuit performance capability is confirmed by the simulation results.

Abstract: Modern maskless photolithography systems based on using spatial light modulators are analyzed in this review. Principles of construction, examples of implementation of systems, as well as factors limiting their spatial resolution are discussed.

Abstract: The results of the investigation of a spatially nonlocal model of surface erosion by the ion bombardment are presented. It is shown that the equilibrium states of the surface in the scope of the model are the plane and a terrace-like profile. Critical values of the bombardment angle and surface diffusion, at which the equilibrium states are lost to perturbations in the form of traveling waves, are determined. The obtained results allow us to explain the main form of the surface topography formed during ion sputtering of the surface, and to determine their parameters, the existence region, and the sequence of appearance.

Abstract: The initial Ti(8 nm)/Co(10 nm)/Ti(5 nm) structures formed on the Si(100) substrate by magnetron sputtering were subjected to two-stage rapid thermal annealing (RTA) in the nitrogen ambient. The samples of the structures were controlled using the time-of-flight SIMS, the Auger spectroscopy, scanning electron microscopy, X-ray dispersion microprobe analysis, and measurements of the layer resistance at each stage of annealing. At the RTA-1 stage (550°C, 45 s), a sacrificial layer formed on the surface. This layer consisted of the titanium (oxy)nitride coating, into which the residual impurities (O, C, and N) were forced out, and the transient Co-Si-Ti(TiO,TiN) layer with a high cobalt content and a low (trace) titanium content. After the selective removal of this sacrificial layer, the surface composition corresponded to monosilicide CoSi, which transformed into the highly conductive CoSi2 phase at the RTA-2 stage (830°C, 25 s).

Abstract: Using two-dimensional (2D) numerical electrothermal simulation, the character of heating of SOS CMOS chip elements under the action of single voltage pulses was determined. The experiments carried out on SOS CMOS chips confirmed the validity of the developed numerical model of thin structure heating under the action of single voltage pulses. It was confirmed that the dependence of the pulse electric strength level on a single voltage pulses (SVP) length for SOS CMOS chips is weaker than that for CMOS chips fabricated using bulk or epitaxial technologies.

Abstract: Digital subthreshold logic provides extremely low power consumption since the power supplies are kept below the threshold voltage and using the small subthreshold current of MOS transistors to operate. In this paper, a body-bias technique to match the subthreshold currents of both the NMOS and PMOS transistors is explored and a Schmitt trigger circuit employing this bias technique is proposed. Extensive circuit simulations were conducted and the results were compared with standard body bias technique in terms of performance parameters. The simulation results were obtained with 0.18 μm technology parameters. The conclusion is that Schmitt trigger with this body biasing is suitable for high performance and ultra low power applications.

Abstract: Features of charge formation in SOS structures under irradiation are investigated experimentally. A model that makes it possible to describe the dependence that the kinetics of charge accumulation and relaxation in the Si-Al2O3 system has on the field strength, temperature, intensity, and type of ionizing radiation is suggested. The influence of the two-dimensional character of processes on the charge formation in the SOS MOS devices is investigated.

Abstract: Results of the investigation into the influence of implantation of oxygen and silicon ions in the silicon layer in a silicon-on-sapphire structure on the crystal quality of the layer and on the increase in the leakage currents of n-channel transistors fabricated based on these structures are presented.

Abstract: The influence of the initial composition of an HCl-H2 mixture on the steady-state parameters and composition of a dc glow discharge plasma (p = 40–200 Pa, ip = 15–35 mA) is investigated. The calculated data on the electron energy distributions, integral characteristics of the electron gas, and plasma composition are gathered. It is shown that the dilution of HCl with hydrogen is not accompanied by a noticeable variation either in the efficiency of processes under the electron impact or in the intensity of the ion bombardment of the surface in contact with the plasma.

Abstract: The test samples of silicon high-voltage multi-junction solar batteries (SHVMJSB) are investigated experimentally. It is shown that the efficiency of the transformation of sunlight by silicon high-voltage multi-junction solar batteries without special antireflection coatings is not high and equal to 8%. It is due to the fact that the recombination rate of the minor charge carries is high on the damaged layer surface. The surface refinement and the antireflection coating make it possible to increase the efficiency of the transformation of sunlight by the silicon high-voltage multi-junction solar batteries of up to 13%.

Abstract: In this article, an algorithm of two-aspect emission optical tomography of plasma taking into account apriori data about the object of investigation is developed. The reconstruction algorithm was tested for statistically large number of phantoms. The cases of incorrect operation of the suggested algorithm were revealed and the methods of its improvement were suggested. The improved algorithm of emission optical tomography compatible with industrial plasmochemical reactors of low-temperature plasma allows us to reconstruct a two-dimensional distribution of plasma particles with the reconstruction error lower than 15% for 90% of randomly selected phantoms.

Abstract: In the second part of our review, we focus on such urgent problems of modern physics as the use of superconductors in quantum informatics and coherent control of the state of mesoscopic systems.

Abstract: Using weakly coherent tandem interferometry, the possibility of simultaneous temperature and film thickness measurements in plasmochemical etching processes of silicon on insulator structure is demonstrated. It is shown that changes of the structure’s total optical thickness related to temperature variation can be separated from a change of the physical film thickness. For that purpose we have to take in account changes of zeros interference peak amplitude caused by changes of the interferentional conditions inside the film when its thickness is changing. Temperature measurement precision is ±1°C. Thickness measurement precision is ±10 nm. The results of process monitoring closely correlate with the results of a stair’s profile obtained with a profilometer.

Abstract: The results of X-ray structural investigations and current-voltage measurements of the HfO2/Si(100) structures are presented. The HfO2 films of 50 nm thickness were deposited in a Si substrate by high-frequency magnetron sputtering in argon plasma and subjected to rapid thermal annealing at 500, 700, and/or 800°C in the Ar or O2 ambient. It is shown that the HfO2 films become polycrystalline after annealing. The presence of various crystalline phases in them and the form of the I–V characteristics of the Al/HfO2/Si(100) test structures strongly depend on the growth conditions and the gas ambient during the rapid thermal annealing. It is established that the HfO2 films deposited at a high-frequency bias at a substrate of −7 V during the growth and then passed through rapid thermal treatment in the O2 ambient at 700°C have the highest breakdown voltages.

Abstract: The results of the development of a decimation filter of an analog-to-digital converter with ternary data encoding are presented. The filter reduces the clock frequency of the delta-sigma modulator of 100 MHz by a factor of 27. The proposed circuit engineering solutions are designed for manufacturing using the standard 0.18 μm MOS technology and the bipolar supply of ±0.9 V. The performance capability of the circuits is confirmed by the results of functional and circuit simulation using MatLab and Cadence Design Systems software.