TL;DR: In this article, the authors present a model implementing the temperature dependence of the saturation velocity vsat into the two-dimensional device simulator MINIMOS-NT, which covers all relevant materials such as the elementary semiconductors Si and Ge, and the binary III-V group semiconductorors GaAs, AlAs, InAs, GaP and InP.

TL;DR: In this paper, a comparative analysis of the main DC and microwave performances of MESFETs made of the commercially available silicon carbide polytypes 3C-SiC, 6H−SiC and 4H−SciC is presented.

TL;DR: In this article, the local refractive index change necessary to guide the light may be imprinted with a simple UV exposure, and the basic structure of guides and hence to make optical circuits which cover the domain of power splitters to wavelength division multiplexers, including directional couplers, gratings, etc.

TL;DR: In this article, the optical buried waveguides fabricated from porous silicon layers are presented, and the modulation of the waveguiding-layer refractive index and the losses on waveguide fabricated from p +.

TL;DR: In this article, the diffusion barrier properties of IMP deposited TaN between Cu and SiO 2 have been investigated in the Cu (200mm)/TaN (30mm)/SiO 2 (250nm)/Si multi-layer structure.

TL;DR: In this article, the formation of porous silicon dioxide films on Si and quartz substrates at low temperatures (25-300°C) by photo-induced sol-gel processing using 172-nm radiation from an excimer lamp has been investigated.

TL;DR: Using electrochemical pore formation in n-type silicon, the starting positions of the pores were photolithographically pre-defined to form a hexagonal lattice of a=1.58mm as discussed by the authors.

TL;DR: In this article, the results of silicon detectors fabricated on bulk float-zone (FZ) material enriched either by carbon or by oxygen were reported, and the detectors were irradiated by nuclear reactor neutrons, by 24 GeV/c protons and by 192 MeV pions.

TL;DR: The mechanism and kinetics of chemical vapor deposition of silicon nitride films from SiH2Cl2 and NH3 have been studied theoretically by ab initio (MP2/MC-31G(d,p)) methods combined with the transition state and RRKM theories as mentioned in this paper.

TL;DR: In this paper, a ferroelectric-inverted grating is achieved using electron beam (EB) on LiNbO 3, and the EB irradiation is performed with a scanning electron microscope (SEM) featuring a maximum accelerating voltage of 30kV.

TL;DR: In this paper, the UV-reaction molding technology enabling for the fabrication of microoptical elements with rectangular, triangular or circular cross-sections (waveguides, prisms, lenses) in optical polymers is described.

TL;DR: In this paper, the authors propose a planar switch based on a reflective polarizing hologram sandwiched between two planar substrates, where the optical paths are controlled by total internal reflection in a liquid crystal cell.

TL;DR: In this article, a model of the evolution of defect concentrations and consequent electrical behavior in detector materials with various oxygen and carbon impurity concentrations was presented. But the model was not applied to the case of the CERN Large Hadron Collider, where unprecedented particle fluences will cause significant atomic displacement damage.

TL;DR: Using high-resolution Laplace deep-level transient spectroscopy (DLTS) as mentioned in this paper, the electron emission characteristics of vacancy-related defects in silicon were compared using high-energy protons and electron-irradiated silicon.

TL;DR: In this article, a combination of computer simulations based on the binary collision approximation (BCA) with classical molecular dynamics (MD) calculations is proposed to predict type and amount of defects created by keV ions under realistic implantation conditions.

TL;DR: In this paper, a self-organised growth of lattice-mismatched layers is proposed to increase the contribution of the radiative recombination to the emission of SiGe nanostructures.

TL;DR: The concept of self-formation of a nanocrystallite (nc-) Si/SiO x ǫ:Si z O y Al nanocomposite at the Al/oxidized porous silicon interface in the result of solid phase processes between Al and oxidized porous Si (PS) and the influence of its composition on photophysical properties were developed and experimentally confirmed for the Si chip with optical intra-chip interconnect consisting of light emitting and photodetector diodes and alumina waveguide on oxidized PS surface with aluminum electrodes.

TL;DR: In this paper, the growth of GaAs1−xNx thin films on GaAs substrates (2° off) by metalorganic vapor-phase epitaxy, in the temperature range 500-600°C.

TL;DR: In this paper, the effects of aluminum incorporation on the performance of a titanium nitride (TiN) diffusion barrier were investigated up to the temperature of 1000°C in the Cu/TixAlyNz/SiO2/Si structure.

TL;DR: In this paper, the authors used computer phase retrieval code to create XY co-ordinate data files for conversion to machining routines where the pixels are machined individually, in order that a reconstructed pattern is formed in the image plane when the DOE is illuminated by a coherent source.

TL;DR: In this paper, quantum chemistry techniques are used to investigate kinetics of chemical reactions involved in the deposition of SiGe heterolayers, and gas-phase reaction pathways for GeH4 decomposition are proposed and relevant reaction rates are evaluated.

TL;DR: In this article, the feasibility of preparing germanium sulfide planar waveguides via sol-gel processing was demonstrated, and a two-step method was used: (1) germania oxide gel films were deposited by spin-coating onto single-crystal silicon wafers or silica glass substrates, using germanIUM ethoxide as the precursor; (2) the gel film were then heat treated in a H2S atmosphere, under different conditions.

TL;DR: In this article, the authors used a combined technique: selective electroless nickel deposition on both sides of a copper foil, followed by its nickel-masked wet etching, to manufacture very thin, ultraflat, stress-compensated metal disks, thus achieving two major advantages, as compared to the classical construction.

TL;DR: In this article, a comprehensive study of the dynamics of the pulse photoresponse of 0.3-1.0μm thick chalcogenide glassy As50Se50 thin films using a transient-grating method was presented.

TL;DR: In this article, the effects of fluorine dose and anneal temperature on the fluorine profile peak and near the amorphous-crystalline interface are compared and compared to results for BF + 2 implants.

TL;DR: In this article, the authors describe the KMC atomistic process simulation scheme and discuss some of the unique features of this simulation technique with the help of results obtained with it, including the link between parameters obtained from ab initio calculations and experiments performed under typical processing conditions.

TL;DR: In this paper, the authors report on micromechanically tunable Fabry-Perot filter concepts for wavelength division multiplexing (WDM) systems, where the optical resonator is designed for a cavity length around 30μm in order to increase the filter selectivity while relaxing the demands on the required mirror reflectance.

TL;DR: In this paper, the authors showed that regrowth occurs below the displacement threshold and moreover, regrowth rate increases when decreasing electron energy below ∼100, ∼125 and ∼200 Ã 0.

TL;DR: In this article, a 3D shape of negative and positive 3D shapes in positive and negative polarity is presented in SEM micrographs, only for positive 3-D shapes, and also the results obtained by using the wall type test structure for aspect ratio evaluation.